274 pages | 152 B/W Illus.
Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:
Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
About the Editor
Perpendicular Spin Torque Oscillator and Microwave-Assisted Magnetic Recording
Jian-Gang (Jimmy) Zhu
Spin-Transfer-Torque MRAM: Device Architecture and Modeling
Xiaochun Zhu and Seung H. Kang
The Prospect of STT-RAM Scaling
Yaojun Zhang, Wujie Wen, Hai Li, and Yiran Chen
Spintronic Device Memristive Effects and Magnetization Switching Optimizing
Magnetic Insulator-Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films
Yiyan Sun, Zihui Wang, and Lei Lu
Electric Field-Induced Switching for Magnetic Memory Devices
Pedram Khalili and Kang L. Wang