383 pages | 199 B/W Illus.
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text:
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
"… looks at the challenges of today 's microelectronics and discusses potential paths into the nano-electronic world. It focuses on solutions developed in response to scaling problems with current silicon technologies, and new approaches, and is a combination of papers from world-leading organizations and articles specifically written for it. … Section III, Post-CMOS Device Concepts, addresses options for future directions in micro- and nano-electronics. An introductory chapter provides a good review of the possible paths for microelectronic device development. … Richly illustrated with graphs, figures, images, and data, this book is intended for researchers working on emerging scaling topics, engineers developing advanced semiconductor technologies, and graduate students wanting to learn about the barriers and future opportunities in the micro- and nano-electronics industry."
—John J. Shea, from IEEEElectrical Insulation Magazine, September/October 2015 - Vol. 31, No. 5
"The topic selection is very good, it covers a wide range of advanced technologies, which are either already introduced or currently in the intense development phases. Contributors are well-known in their fields and in a position to provide state-of-the-art overview of the corresponding topics."
—Gennadi Bersuker, Sematech, USA
"This is a timely, well planned, book that covers all the relevant challenges that the industrial and academic electron device research communities have recently overcome, and are nowadays facing to ensure the successful continuation of CMOS technology downscaling and electronic systems evolution toward ultra-high density and ultra-low power."
—Luca Selmi, DIEGM, University of Udine, Italy
Silicon Compound Devices
SiGe BiCMOS Technology and Devices; Edward Preisler and Marco Racanelli
Si–Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices; Guangrui (Maggie) Xia and Yuanwei Dong
SiC MOS Devices: N Passivation of Near-Interface Defects; P. M. Mooney and A. F. Basile
Advanced CMOS Devices
Fully Depleted Devices: FDSOI and FinFET; Bruce Doris, Ali Khakifirooz, Kangguo Cheng, and Terence Hook
Fully Depleted SOI Technology Overview; Bich-Yen Nguyen, Frederic Allibert, Christophe Marville, and Carlos Mazure
FinFETs: Designing for New Logic Technology; W. P. Maszara
Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures; Barry P. Linder, Eduard A. Cartier, Siddarth A. Krishnan, Chunyan E. Tian, and Vijay Narayanan
High-Mobility Channels; Nadine Collaert
2-D InAs XOI FETs: Fabrication and Device Physics; Rehan Kapadia, Kuniharu Takei, Hui Fang, and Ali Javey
Post-CMOS Device Concepts
Beyond-CMOS Devices; An Chen
Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing; Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, and Siegfried Selberherr
Four-State Hybrid Spintronics–Straintronics for Ultralow Power Computing; Noel D’Souza, Jayasimha Atulasimha, and Supriyo Bandyopadhyay
Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics; Takeo Ohno
Elements of Carbon Electronics
Physics-Based Compact Graphene Device Modeling; Kristen Parrish and Deji Akinwande
Carbon Nanotube Vertical Interconnects: Prospects and Challenges; S. Vollebregt, C. I. M. Beenakker, and R. Ishihara
Graphene Nanosheet as Ultrathin Barrier; Yuda Zhao and Yang Chai