1st Edition

Nano-Semiconductors Devices and Technology

Edited By Krzysztof Iniewski Copyright 2012
    599 Pages 373 B/W Illustrations
    by CRC Press

    600 Pages 373 B/W Illustrations
    by CRC Press

    With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies.

    Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics.

    The book is divided into three parts that address:

    • Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices)
    • Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells)
    • Compound semiconductor devices and technology

    This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

    Section I: Semiconductor Materials

    Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models, A. Maffucci, A.G. Chiariello, C. Forestiere, and G. Miano

    Monolithic Integration of Carbon Nanotubes and CMOS, H. Xie

    Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication, S. Chaudhary and N.M. Neihart

    Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years, K.M. Alam and S. Pramanik

    Section II: Silicon Devices and Technology

    SiGe BiCMOS Technology and Devices, M. Racanelli and E. Preisler

    Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm, A. Afzalian

    Development of 3D Chip Integration Technology, K. Sakuma

    Embedded Spin–Transfer–Torque MRAM, K. Lee

    Nonvolatile Memory Device: Resistive Random Access Memory, P. Zhou, L. Chen, H. Lv, H. Wan, and Q. Sun

    DRAM Technology, M.J. Lee

    Monocrystalline Silicon Solar Cell Optimization and Modeling, J. Huang and V. Moroz

    Radiation Effects on Silicon Devices, M. Bagatin, S. Gerardin, and A. Paccagnella

    Section III: Compound Semiconductor Devices and Technology

    GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology, S.-C. Shen, J.-H. Ryou, and R.D. Dupuis

    GaN HEMTs Technology and Applications, G.I. Ng and S. Arulkumaran

    Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors, C.-T. Lee

    GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices, F. Medjdoub

    GaAs HBT and Power Amplifier Design for Handset Terminals, K. Yamamoto

    Resonant Tunneling and Negative Differential Resistance in III-Nitrides, V. Litvinov

    New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors, P.K. Kandaswamy and E. Monroy


    Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.