1st Edition

Nanocrystals in Nonvolatile Memory

Edited By

Writam Banerjee

ISBN 9789814774734
Published September 13, 2018 by Jenny Stanford Publishing
554 Pages 22 Color & 208 B/W Illustrations

USD $199.95

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Book Description

In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications.

This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.

Table of Contents

Nanocrystal Materials, Fabrication, and Characterizations

S. Chowdhury and P. Barik

Modeling and Simulation of Nanocrystal Flash Memory

B. Sharma and C. K. Sarkar

Charge Trapping and High-k Nanocrystal Flash Memory

M. C. Lee and H. Y. Wong

Silicon Nanocrystal Flash Memory

L. Zhao, T. Lv, and G. Fan

Synthesis, Characterization and Memory Application of Germanium Nanocrystals in Dielectric Matrices

W. K. Choi and W. Banerjee

Nanographene Flash Memory

J. Meng, R. Yang, and G. Zhang

Data Recovery of Flash Memory

B. K. Shibwabo and I. A. Lukandu

Nanocrystals in Resistive Random Access Memory

W. Banerjee and Q. Liu

Measurements Aspects of Nonvolatile Memory

A. Campisi

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Writam Banerjee is assistant professor in the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, since 2014. He completed his BSc and MSc in physics from Vidyasagar University, West Bengal, India. He received his PhD in electronic engineering from Chang Gung University, Taiwan. Dr. Banerjee has been a visiting scientist at PGI-7, Forschungszentrum Jülich GmbH, Germany, during 2012–2013 and has led its joint project with Intel Corporation, California, USA, on the development of resistive memory. He was also engaged in the development of nano-crossbar resistive random-access memory (RRAM) devices and their integration with transistors, a project in collaboration with IMEC, Belgium. He has authored and co-authored over 30 publications in reputed international journals and over 50 publications in conference proceedings. His current research interests include the novel high-k nanocrystals; design, fabrication, characterization, and analysis of RRAM, VRRAM, crossbar memory, and storage class memory; and high-density nanoscale 3D memory devices.