Nanometer CMOS: 1st Edition (Hardback) book cover

Nanometer CMOS

1st Edition

By Juin J. Liou, Frank Schwierz, Hei Wong

Pan Stanford

340 pages | 171 B/W Illus.

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Hardback: 9789814241083
pub: 2010-02-28
eBook (VitalSource) : 9781315272900
pub: 2017-01-31
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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.


"Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book."

—Prof. Michael Shur, Rensselaer Polytechnic Institute, USA

"This book combines the knowledge of three distinguished authors in a unique blend transcending from early history to modern-day nanotechnology; the text will be enjoyable, educational and illuminating for the technical novice and the modern expert."

—Dr. Steven Voldman, ESD Association, USA

Table of Contents

The Evolution of Silicon Electronics


The Early Days of Semiconductor Electronics

Moore’s Law

Further trends and the ITRS

Improved MOSFET Designs

MOSFETs for High-Frequency Operation?



MOS Fundamentals

MOSFET Current— Voltage Characteristics

Nanoscale MOSFETs

MOSFET Scaling Theory

Nanoscale MOSFET Concepts — An Overview

Nanoscale Bulk MOSFETs

Mobility Enhancement Techniques

High-k Dielectrics and Metal Gates

Nanoscale Single-Gate SOI MOSFETs

Nanoscale Multiple-Gate MOSFETs

MOSFETs with Alternative Channel Materials

The Effect of Multiple Technology Boosters

MOSFETs for RF Applications


RF Transistor Figures of Merit

Small-Signal Equivalent Circuits

RF MOSFET Design and Performance

Overview of Nanometer CMOS Technology



Plasma Etching

Thin Film Formation Techniques

Junction Formation





Critical Scaling Issues

Will There Be a Mainstream Beyond-Scaling, Post-CMOS Technology?

Appendix A: Frequently Used Symbols

Appendix B: Physical Constants and Unit Conversions

Appendix C: Important Properties of Si and SiO₂

Appendix D: Carrier Concentrations, Energy, and Potential

Appendix E: Frequently Used Abbreviations

About the Authors

Juin J Liou, Frank Schwierz, Hei Wong

Subject Categories

BISAC Subject Codes/Headings:
TECHNOLOGY & ENGINEERING / Electronics / General