1st Edition

Nanometer CMOS




ISBN 9789814241083
Published February 28, 2010 by Jenny Stanford Publishing
350 Pages 171 B/W Illustrations

USD $170.00

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Book Description

This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Table of Contents

The Evolution of Silicon Electronics
Introduction
The Early Days of Semiconductor Electronics
Moore’s Law
Further trends and the ITRS
Improved MOSFET Designs
MOSFETs for High-Frequency Operation?

MOSFET Theory
Introduction
MOS Fundamentals
MOSFET Current— Voltage Characteristics

Nanoscale MOSFETs
MOSFET Scaling Theory
Nanoscale MOSFET Concepts — An Overview
Nanoscale Bulk MOSFETs
Mobility Enhancement Techniques
High-k Dielectrics and Metal Gates
Nanoscale Single-Gate SOI MOSFETs
Nanoscale Multiple-Gate MOSFETs
MOSFETs with Alternative Channel Materials
The Effect of Multiple Technology Boosters

MOSFETs for RF Applications
Introduction
RF Transistor Figures of Merit
Small-Signal Equivalent Circuits
RF MOSFET Design and Performance

Overview of Nanometer CMOS Technology
Introduction
Lithography
Plasma Etching
Thin Film Formation Techniques
Junction Formation
Interconnects
Summary

Outlook
Introduction
Critical Scaling Issues
Will There Be a Mainstream Beyond-Scaling, Post-CMOS Technology?

Appendix A:
Frequently Used Symbols
Appendix B: Physical Constants and Unit Conversions
Appendix C: Important Properties of Si and SiO₂
Appendix D: Carrier Concentrations, Energy, and Potential
Appendix E: Frequently Used Abbreviations

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Author(s)

Biography

Juin J Liou, Frank Schwierz, Hei Wong

Reviews

"Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book."
—Prof. Michael Shur, Rensselaer Polytechnic Institute, USA

"This book combines the knowledge of three distinguished authors in a unique blend transcending from early history to modern-day nanotechnology; the text will be enjoyable, educational and illuminating for the technical novice and the modern expert."
—Dr. Steven Voldman, ESD Association, USA