Nanoscale Semiconductor Memories: Technology and Applications, 1st Edition (Paperback) book cover

Nanoscale Semiconductor Memories

Technology and Applications, 1st Edition

Edited by Santosh K. Kurinec, Krzysztof Iniewski

CRC Press

448 pages | 316 B/W Illus.

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Description

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Table of Contents

Static Random Access Memory

SRAM: The Benchmark of VLSI Technology, Qingqing Liang

Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies, Gilles Gasiot and Philippe Roche

Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation, Lawrence T. Clark

Dynamic Random Access Memory

DRAM Technology, Myoung Jin Lee

Concepts of Capacitorless 1T-DRAM and Unified Memory on SOI, Sorin Cristoloveanu and Maryline Bawedin

A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Nodes and Beyond, Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu

Novel Flash Memory

Quantum Dot-Based Flash Memories, Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg

Magnetic Memory|

Spin-Transfer-Torque MRAM, Kangho Lee

Magnetic Domain Wall "Racetrack" Memory, Michael C. Gaidis and Luc Thomas

Phase-Change Memory

Phase-Change Memory Cell Model and Simulation, Jin He, Yujun Wei, and Mansun Chan

Phase-Change Memory Devices and Electrothermal Modeling, Helena Silva, Azer Faraclas, and Ali Gokirmak

Resistive Random Access Memory

Nonvolatile Memory Device: Resistive Random Access Memory, Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun

Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits, Hong Yu Yu

Index

About the Series

Devices, Circuits, and Systems

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Subject Categories

BISAC Subject Codes/Headings:
TEC008000
TECHNOLOGY & ENGINEERING / Electronics / General
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General
TEC027000
TECHNOLOGY & ENGINEERING / Nanotechnology & MEMS