Physics of Silicon Nanodevices
David K. Ferry and Richard Akis
Tri-Gate Transistors
Suman Datta
Variability in Scaled MOSFETs
Toshiro Hiramoto
Self-Heating Effects in Nanoscale 3D MOSFETs
Tsunaki Takahashi and Ken Uchida
Spintronics-Based Nonvolatile Computing Systems
Tetsuo Endoh
NEMS Devices
Yoshishige Tsuchiya and Hiroshi Mizuta
Tunnel FETs for More Energy-Efficient Computing
Adrian M. Ionescu
Dopant-Atom Silicon Tunneling Nanodevices
Daniel Moraru and Michiharu Tabe
Single-Electron Transfer in Si Nanowires
Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi
Coupled Si Quantum Dots for Spin-Based Qubits
Tetsuo Kodera and Shunri Oda
Potential of Nonvolatile Magnetoelectric Devices for Spintronic Applications
Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov
Biography
Shunri Oda received his BSc in physics in 1974 and MEng and DEng from the Tokyo Institute of Technology in 1976 and 1979, respectively. He is a professor in the Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology. He has authored more than 700 papers and edited Silicon Nanoelectronics (2005) for CRC Press. Professor Oda is a fellow of the Institute of Electrical and Electronics Engineers (IEEE) and the Japan Society for Applied Physics, a member of the Electrochemical Society and the Materials Research Society, and a distinguished lecturer at the IEEE Electron Devices Society.
David K. Ferry received his BSEE and MSEE from Texas Tech University, Lubbock, in 1962 and 1963, respectively, and PhD from the University of Texas (UT), Austin, in 1966. His research interests include transport physics and modeling of quantum effects in ultra-small semiconductor devices. Dr. Ferry is a fellow of the American Physical Society, the Institute of Electrical and Electronics Engineers, and the Institute of Physics (UK). He has published numerous articles, books, book chapters, and conference papers, serves as editor of the Journal of Computational Electronics, and is an admiral in the Texas Navy and the Tennessee Squire Association.
"This book covers recent trends and technologies of Si nanoscale devices, from cutting-edge transistors to qubits (quantum bits). It is a good book for graduate students and researchers to learn briefly about basic physics and the recent trends of silicon nanoscale devices."
—Koji Ishibashi, Advanced Device Laboratory, Riken, Japan"It is remarkable that this book offers a large overview of carrier transport mechanisms and device physics while it is strictly focused on silicon technology. For instance, topics like spintronics, single-electron transfer, spin-based qubits, and nonvolatile magnetoelectronic devices are rarely approached on the point of view of silicon material and technology."
—Philippe Dollfus, CNRS – University of Paris-Sud, Orsay, France"The authors put together the hottest topics that the nanoelectronics community is currently debating. … a good reference for researchers and/or educators who are interested in the physical challenges of future electronic devices based on charge, spin transfer, or mechanical actuation and sensing."
—Simon Deleonibus, CEA, LETI, France"Very comprehensive book … written with great clarity by world-leading experts in the field. ... The topics are well selected and cover most of the subjects related to nanoscale silicon devices. … includes plenty of references for anyone who wants to get deeper."
—Tomás González, Applied Physics Department, University of Salamanca, Spain
