Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics
Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption.
This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI).
Additional coverage includes:
- Physics of nm scaled devices in terms of quantum mechanics
- Advanced 3D transistors: tri-gate structure and thermal effects
- Variability in scaled MOSFET
- Spintronics on Si platform
- NEMS devices for switching, memory, and sensor applications
- The concept of ballistic transport
- The present status of the transistor variability and more
An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Physics of Silicon Nanodevices
David K. Ferry and Richard Akis
Variability in Scaled MOSFETs
Self-Heating Effects in Nanoscale 3D MOSFETs
Tsunaki Takahashi and Ken Uchida
Spintronics-Based Nonvolatile Computing Systems
Yoshishige Tsuchiya and Hiroshi Mizuta
Tunnel FETs for More Energy-Efficient Computing
Adrian M. Ionescu
Dopant-Atom Silicon Tunneling Nanodevices
Daniel Moraru and Michiharu Tabe
Single-Electron Transfer in Si Nanowires
Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi
Coupled Si Quantum Dots for Spin-Based Qubits
Tetsuo Kodera and Shunri Oda
Potential of Nonvolatile Magnetoelectric Devices for Spintronic Applications
Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov
"This book covers recent trends and technologies of Si nanoscale devices, from cutting-edge transistors to qubits (quantum bits). It is a good book for graduate students and researchers to learn briefly about basic physics and the recent trends of silicon nanoscale devices."
—Koji Ishibashi, Advanced Device Laboratory, Riken, Japan
"It is remarkable that this book offers a large overview of carrier transport mechanisms and device physics while it is strictly focused on silicon technology. For instance, topics like spintronics, single-electron transfer, spin-based qubits, and nonvolatile magnetoelectronic devices are rarely approached on the point of view of silicon material and technology."
—Philippe Dollfus, CNRS – University of Paris-Sud, Orsay, France
"The authors put together the hottest topics that the nanoelectronics community is currently debating. … a good reference for researchers and/or educators who are interested in the physical challenges of future electronic devices based on charge, spin transfer, or mechanical actuation and sensing."
—Simon Deleonibus, CEA, LETI, France
"Very comprehensive book … written with great clarity by world-leading experts in the field. ... The topics are well selected and cover most of the subjects related to nanoscale silicon devices. … includes plenty of references for anyone who wants to get deeper."
—Tomás González, Applied Physics Department, University of Salamanca, Spain