This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Table of Contents
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.