1st Edition
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
392 Pages
by
CRC Press
392 Pages
469 B/W Illustrations
by
CRC Press
392 Pages
469 B/W Illustrations
by
CRC Press
Also available as eBook on:
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed... Read more
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Biography
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.
