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Nitride Wide Bandgap Semiconductor Material and Electronic Devices





ISBN 9780367574369
Published June 30, 2020 by CRC Press
392 Pages

 
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Book Description

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Table of Contents

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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Author(s)

Biography

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.