1st Edition
Novel Compound Semiconductor Nanowires Materials, Devices, and Applications
Epitaxial Heterostructure Nanowires
Nari Jeon and Lincoln J. Lauhon
Molecular beam epitaxial growth of GaN nanocolumns and related nanocolumn emitters
Katsumi Kishino and Hiroto Sekiguchi
Novel GaNP nanowires for advanced optoelectronics and photonics
I. A. Buyanova, C. W. Tu, and W. M. Chen
GaNAs-based nanowires for near-infrared optoelectronics
I. A. Buyanova, F. Ishikawa, and W. M. Chen
Dilute Bismide Nanowires
Wojciech. M. Linhart, Szymon. J. Zelewski, Fumitaro Ishikawa, Satoshi Shimomura, and Robert Kudrawiec
Ferromagnetic MnAs/III-V Hybrid Nanowires for Spintronics
Shinjiro Hara
GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics
Maria Hilse, Bernd Jenichen, and Jens Herfort
GaAs/AlGaOx Heterostructured Nanowires Synthesized by Post Growth Wet Oxidation
Fumitaro Ishikawa and Naoki Yamamoto
GaAs/SrTiO3 Core-Shell Nanowires
Xin Guan and José Penuelas
Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light emitters to nano-transistors
Zarko Gacevic and Enrique Calleja
InP-related nanowires for light-emitting applications
Kenichi Kawaguchi
InP/InAs quantum heterostructure nanowires
Guoqiang Zhang, Kouta Tateno, and Hideki Gotoh
III-Nitride Nanowires and Their Laser, LED photovoltaic Applications
Wei Guo, Pallab Bhattacharya, and Junseok Heo
III-V nanowires: transistor and photovoltaic applications
Katsuhiro Tomioka, Junichi Motohisa, and Takashi Fukui
Biography
Fumitaro Ishikawa received his bachelor’s degree in 1999 and his PhD in electronics engineering in 2004 from Hokkaido University, Sapporo. In 2004 he joined Paul Drude Institute für Festkörperelektronik, Berlin. In 2007 he became assistant professor in Osaka University. Since 2013, he is associate professor in Ehime University. He has worked on molecular beam epitaxy of compound semiconductors throughout his career. His current research interests mainly focus on the synthesis of advanced materials based on compound semiconductor nanostructures.
Irina A. Buyanova received her BSc degree in physics in 1982 from Kiev State University and her PhD in solid state physics in 1987 from the Institute for Semiconductors, Ukrainian Academy of Sciences, Kiev. In 1994 she joined the Department of Physics, Chemistry and Biology, Linköping University, Sweden. In 2002 she was awarded a senior researcher grant of excellence from the Swedish Research Council, followed by a professorship at Linköping University in 2007. Her current research interests mainly focus on physics and applications of novel spintronic materials, advanced electronic and photonic materials based on wide-bandgap semiconductors, and highly mismatched semiconductors and related nanostructures.
