Oxide materials have been used in mainstream semiconductor technology for several decades and have served as important components, such as gate insulators or capacitors, in integrated circuits. However, in recent decades, this material class has emerged in its own right as a potential contender for alternative technologies, generally designated as ‘beyond Moore’. The 2004 discovery by Ohtomo and Hwang was a global trendsetter in this context. It involved observing a two-dimensional, high-mobility electron gas at the heterointerface between two insulating oxides, LaAlO3 and SrTiO3, supported by the rise of nascent deposition and growth-monitoring techniques, which was an important direction in materials science research. The quest to understand the origin of this unparalleled physical property and to find other emergent properties has been an active field of research in condensed matter that has united researchers with expertise in diverse fields such as thin-film growth, defect control, advanced microscopy, semiconductor technology, computation, magnetism and electricity, spintronics, nanoscience, and nanotechnology.
Table of Contents
1. Elastic Control of Magnetic Order at Oxide Interfaces
2. Interface Engineering in La0.67Sr0.33MnO3–SrTiO3
3. Electron Transport Across Oxide Interfaces on the Nanoscale
4. An Overview on Quantum Phenomena at the Oxide Interfaces: The Role of Spin and Charge
5. Domain Walls in Multiferroic Materials and Their Functional Properties
6. Spintronic Functionalities in Multiferroic Oxide-based Heterostructures
7. Novel Functionalities in Oxide Magnetic Tunnel Junctions: Spin Filtering by Interface-Induced Magnetism
8. Orbital Symmetry and Electronic Properties of Two-Dimensional Electron Systems in Oxide Heterointerfaces
Tamalika Banerjee studied physics at Presidency University, Kolkata, India, and received her PhD from the University of Madras, India.
'Oxide Spintronics is an edited volume providing a very detailed and current account of complex oxide materials (primarily perovskite structures) as used in engineered electronic materials. It comprises eight chapters, each contributed by a different research group. Every chapter has its own extended reference section, and an index allows the reader to quickly track down information about specific topics throughout the book. Overall the chapters are well written with most formulas and equations well described. The text is detailed and useful for the advanced scientist in each of the very specific areas covered.' - Dr. H. Giesche, CHOICE