Physical Models for Quantum Dots  book cover
1st Edition

Physical Models for Quantum Dots

ISBN 9789814877572
Published December 23, 2021 by Jenny Stanford Publishing
988 Pages 55 Color & 308 B/W Illustrations

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Book Description

Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.

Table of Contents

Part 1: Electrostatic Quantum Dots: Planar Technology  1. Self-Consistent Analysis of Single Electron Charging Effects in Quantum Dot Nanostructures  2. Disorder-Induced Resonant Tunneling in Planar Quantum Dot Nanostructures  3. Three-Dimensional Self-Consistent Simulation of Interface and Dopant Disorders in Delta-Doped Grid-Gate Quantum Dot Devices  4. Shell-Filling Effects and Coulomb Degeneracy in Planar Quantum Dot Structures  5. Shell Filling of Artificial Atoms Within the Density Functional Theory  6. Electronic Properties and Spin Polarization in Coupled Quantum Dots  7. Capacitive Energy of Quantum Dots with Hydrogenic Impurity  8. Electron–Electron Interactions Between Orbital Pairs in Quantum Dots 9. 2D Limit of Exchange–Correlation Density Energy Functional Approximation  10. Single-Electron Charging and Detection in a Laterally Coupled Quantum Dot Circuit in the Few-Electron Regime  11. Engineering the Quantum Point Contact Response to Single-Electron Charging in a Few-Electron Quantum Dot Circuit  12. Electrostatic Cross-Talk Between Quantum Dot and Quantum Point Contact Charge Read-Out in Few-Electron Quantum Dot Circuits  13. Dimensionality Effects in the Two-Electron System in Circular and Elliptic Quantum Dots  14. Single-Particle State Mixing in Two-Electron Coupled Quantum Dots  15. Exchange Interaction and Stability Diagram of Coupled Quantum Dots in Magnetic Fields  16. Coulomb Localization and Exchange Modulation in Two-Electron Coupled Quantum Dots  17. Single-Particle State Mixing and Coulomb Localization in Two-Electron Realistic Coupled Quantum Dots  18. Von Neumann–Wigner Theorem in Quantum Dot Molecules  19. Non-monotonic Variation of the Exchange Energy in Double Elliptic Quantum Dots  Part 2: Electrostatic Quantum Dots: Vertical Technology  20. Modeling of the Electronic Properties of Vertical Quantum Dots by the Finite Element Method  21. Addition Energy Spectrum of a Quantum Dot Disk up to the Third Shell  22. Shell Charging and Spin Filling Sequences in
Realistic Vertical Quantum Dots  23. Three-Dimensional Analysis of the Electronic Structure of Cylindrical Vertical Quantum Dots  24. Hybrid Lsd a/Diffusion Quantum Monte Carlo Method for Spin Sequences in Vertical Quantum Dots  25. Self-Consistent Simulations of a Four Gated Vertical Quantum Dot  26. Three-Dimensional Self-Consistent Simulations of Symmetric and Asymmetric Laterally Coupled Vertical Quantum Dots  27. Spin Configurations in Circular and Rectangular Quantum Dot in a Magnetic Field: Three-dimensional Self-consistent Simulations  28. Spin Charging Sequences in Three Colinear Laterally Coupled Vertical Quantum Dots  29. Many-Body Excitations in the Tunneling Current Spectra of a Few-Electron Quantum Dot  30. Coupled Quantum Dots as Two-Level Systems: A Variational Monte Carlo Approach  31. Tunable Many-Body Effects in Triple Quantum Dots  Part 3: Self-Assembled Quantum Dots  32. Self-consistent Calculation of the Electronic Structure and Electron–electron Interaction in Self-assembled InAs-GaAs Quantum Dot Structures  33. Electronic Coupling in InAs/GaAs Self-assembled Stacked Double quantum dot Systems  34. Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots  35. Electronic Structure of Self-Assembled Quantum Dots:
Comparison Between Density Functional Theory and Diffusion Quantum Monte Carlo  36. Electronic Properties of Inas/Gaas Self-Assembled Quantum Dots: Beyond the Effective Mass Approximation  37. Electron-Hole Alignment in Inas/Gaas Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape  38. Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Self-Assembled
InAs/GaAs Quantum Dots  39. Interband Transition Distributions in the Optical Spectra of InAs/GaAs Self-Assembled Quantum Dots  40. Effects of Thin GaAs Insertion Layer on InAs/(InGaAs)/InP(001) Quantum Dots Grown by Metalorganic Chemical Vapor Deposition  41. Enhanced Intraband Transitions with Strong Electric
Field Asymmetry in Stacked Inas/Gaas Self-Assembled Quantum Dots  42. Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots 43. Anomalous Quantum-Confined Stark Effects in
Stacked InAs/GaAs Self-Assembled Quantum Dots  44. Spontaneous Localization in InAs/GaAs Self-Assembled Quantum Dot Molecules  45. Enhanced Piezoelectric Effects in Three-Dimensionally Coupled Self-Assembled Quantum Dot Structures  46. A nisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled Inas/Gaas Self-Assembled Quantum Dots  Part 4: Silicon/Germanium Nanocrystals  47. Three-Dimensional Self-Consistent Simulation of Silicon Quantum Dot Floating-Gate Flash Memory Device  48. Stark Effect and Single-Electron Charging in Silicon Nanocrystal Quantum Dots  49. Strain Effect in Large Silicon Nanocrystal Quantum Dots  50. Geometry and Strain Effects on Single-Electron Charging in Silicon Nanocrystals 51. Three-Dimensional Self-Consistent Simulation of the Charging Time Response in Silicon Nanocrystal Flash Memories  52. Effects of Crystallographic Orientations on the Charging Time in Silicon Nanocrystal Flash Memories  53. Intraband Absorption and Stark Effect in Silicon Nanocrystals  54. Intraband Absorption in Silicon Nanocrystals: The Combined Effect of Shape and Crystal Orientation  55. Hole- Versus Electron-Based Operations in SiGe Nanocrystal Nonvolatile Memories  56. Light-Induced Programming of Si Nanocrystal Flash
Memories  57. Interface Defect-Assisted Single Electron Charging (and Discharging) Dynamics in Ge Nanocrystals

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Jean-Pierre Leburton is a Gregory Stillman Professor of Electrical and Computer Engineering and a Professor of Physics at the University of Illinois at Urbana-Champaign (UIUC), Illinois, USA. He is also a professor at the Micro and Nanotechnology Laboratory and Coordinated Science Laboratory, UIUC. His research interests include semiconductor devices, nonlinear transport in semiconductors, electronic and optical properties of quantum well heterostructures and superlattices, physical properties of quantum wires and quantum dots, spin effects in quantum dots, simulation of nanostructures, quantum computation and quantum information processing, and DNA electronic recognition.