Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories.
Across nine chapters, it covers:
• SiC and IV-IV semiconductors,
• III-GaN and Nitride semiconductors
• III-V and II-VI semiconductors,
• ZnO-based and GaO-based semiconducting oxides,
• Graphene, ferroelectric oxides and other emerging materials,
• Wide band gap semiconductors of SiC, GaN and ZnO, and
• ultra-wide gap semiconductors of AlN, Ga2O3 and Graphene are emphasized.
Key achievements from the author and collaborators in the above fields are referred and cited with typical Raman spectral graphs and analyses.
Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy.
Preface
Acknowledgements
Chapter 1 Introduction
Chapter 2 SiC and IV-IV semiconductors
Chapter 3 GaN semiconductors
Chapter 4 Other III-Nitride semiconductors
Chapter 5 III-V semiconductors
Chapter 6 II-VI semiconductors
Chapter 7 ZnO-based semiconductors
Chapter 8 GaO-based oxides and Graphene
Chapter 9 Ferroelectric oxides and others
References
Summary
Biography
Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering; and Guangxi University (GXU) (2015-2020) as a distinguished professor at School of Physical Science and Technology.
He established the Science Exploring Lab and joined Kennesaw State University, as an Adjunct Professor and part-time at Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. He is currently focusing on materials research for LED, III-Nitrides, SiC, ZnO, other semiconductors/oxides and nano-structures.
Zhe Chuan Feng is a well-known expert in the field. He has long time devoted to materials research and growth of III-V and II-VI compounds, LED, III-nitrides, SiC, ZnO, GaO and other semiconductors/oxides. Professor Feng has edited/published 12 review books on compound semiconductors and microstructures, porous Si, SiC and III-nitrides, ZnO devices, and nanoengineering, especially in the 21st century on wide band gap semiconductors.
He has authored and co-authored 430 scientific journal papers and 420 conference/proceeding papers, among which there are 80 Journal papers and 50-conference papers on Raman scattering or using Raman spectroscopy. He has been a symposium organizer and invited speaker at different international conferences and universities, whilst serving as a guest editor for special journal issues and a guest professor at Sichuan University, Nanjing Tech University, and South China Normal University to name a few.
