1st Edition
SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
By John D. Cressler
Copyright 2010
262 Pages
140 B/W Illustrations
by
CRC Press
264 Pages
140 B/W Illustrations
by
CRC Press
Also available as eBook on:
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and... Read more
Contents
Introduction
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe and Si Strained-Layer Epitaxy
Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
MBE Growth Techniques; M. Oehme and E. Kasper
UHV/CVD Growth Techniques; T.N. Adam
Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
Stability Constraints in SiGe Epitaxy; A. Fischer
Electronic Properties of Strained Si/SiGe and Si1–yCy Alloys; J.L. Hoyt
Carbon Doping of SiGe; H.J. Osten
Contact Metallization on Silicon–Germanium; C.K. Maiti
Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
Appendices
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi
Index
Introduction
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe and Si Strained-Layer Epitaxy
Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
MBE Growth Techniques; M. Oehme and E. Kasper
UHV/CVD Growth Techniques; T.N. Adam
Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
Stability Constraints in SiGe Epitaxy; A. Fischer
Electronic Properties of Strained Si/SiGe and Si1–yCy Alloys; J.L. Hoyt
Carbon Doping of SiGe; H.J. Osten
Contact Metallization on Silicon–Germanium; C.K. Maiti
Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
Appendices
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi
Index
Biography
John D. Cressler
