SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices: 1st Edition (Hardback) book cover

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

1st Edition

By John D. Cressler

CRC Press

264 pages | 140 B/W Illus.

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Hardback: 9781420066852
pub: 2007-12-13
eBook (VitalSource) : 9781315218908
pub: 2017-12-19
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What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Table of Contents



The Big Picture; J.D. Cressler

A Brief History of the Field; J.D. Cressler

SiGe and Si Strained-Layer Epitaxy

Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler

Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil

Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot

MBE Growth Techniques; M. Oehme and E. Kasper

UHV/CVD Growth Techniques; T.N. Adam

Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich

Stability Constraints in SiGe Epitaxy; A. Fischer

Electronic Properties of Strained Si/SiGe and Si1–yCy Alloys; J.L. Hoyt

Carbon Doping of SiGe; H.J. Osten

Contact Metallization on Silicon–Germanium; C.K. Maiti

Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki


Properties of Silicon and Germanium; J.D. Cressler

The Generalized Moll-Ross Relations; J.D. Cressler

Integral Charge-Control Relations; M. Schröter

Sample SiGe HBT Compact Model Parameters; R.M. Malladi


Subject Categories

BISAC Subject Codes/Headings:
TECHNOLOGY & ENGINEERING / Electronics / General
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General