Silicon Heterostructure Devices: 1st Edition (Hardback) book cover

Silicon Heterostructure Devices

1st Edition

By John D. Cressler

CRC Press

472 pages | 302 B/W Illus.

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Hardback: 9781420066906
pub: 2007-12-13
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pub: 2018-10-03
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Description

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Table of Contents

Contents

Introduction

The Big Picture; J.D. Cressler

A Brief History of the Field; J.D. Cressler

SiGe HBTs

Overview: SiGe HBTs; J.D. Cressler

Device Physics; J.D. Cressler

Second-Order Effects; J.D. Cressler

Low-Frequency Noise; G. Niu

Broadband Noise; D.R. Greenberg

Microscopic Noise Simulation; G. Niu

Linearity; G. Niu

pnp SiGe HBTs; J.D. Cressler

Temperature Effects; J.D. Cressler

Radiation Effects; J.D. Cressler

Reliability Issues; J.D. Cressler

Self-Heating and Thermal Effects; J-S. Rieh

Device-Level Simulation; G. Niu

SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg

Heterostructure FETs

Overview: Heterostructure FETs; J.D. Cressler

Biaxial Strained Si CMOS; K. Rim

Uniaxial Stressed Si MOSFET; S.E. Thompson

SiGe-Channel HFETs; S. Banerjee

Industry Examples at State-of-the-Art: Intel’s 90 nm Logic Technologies; S.E. Thompson

Other Heterostructure Devices

Overview: Other Heterostructure Devices; J.D. Cressler

Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser

IMPATT Diodes; E. Kasper and M. Oehme

Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald

Self-Assembling Nanostructures in Ge(Si)–Si Heteroepitaxy; R. Hull

Optoelectronic Components

Overview: Optoelectronic Components; J.D. Cressler

Si–SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim

Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto

Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving

Si–SiGe Quantum Cascade Emitters; D.J. Paul

Appendices

Properties of Silicon and Germanium; J.D. Cressler

The Generalized Moll-Ross Relations; J.D. Cressler

Integral Charge-Control Relations; M. Schröter

Sample SiGe HBT Compact Model Parameters; R.M. Malladi

Subject Categories

BISAC Subject Codes/Headings:
TEC008000
TECHNOLOGY & ENGINEERING / Electronics / General
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General