1st Edition

Silicon Heterostructure Devices

ISBN 9781420066906
Published December 13, 2007 by CRC Press
472 Pages 302 B/W Illustrations

USD $180.00

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Book Description

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Table of Contents

The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
Overview: SiGe HBTs; J.D. Cressler
Device Physics; J.D. Cressler
Second-Order Effects; J.D. Cressler
Low-Frequency Noise; G. Niu
Broadband Noise; D.R. Greenberg
Microscopic Noise Simulation; G. Niu
Linearity; G. Niu
pnp SiGe HBTs; J.D. Cressler
Temperature Effects; J.D. Cressler
Radiation Effects; J.D. Cressler
Reliability Issues; J.D. Cressler
Self-Heating and Thermal Effects; J-S. Rieh
Device-Level Simulation; G. Niu
SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg
Heterostructure FETs
Overview: Heterostructure FETs; J.D. Cressler
Biaxial Strained Si CMOS; K. Rim
Uniaxial Stressed Si MOSFET; S.E. Thompson
SiGe-Channel HFETs; S. Banerjee
Industry Examples at State-of-the-Art: Intel’s 90 nm Logic Technologies; S.E. Thompson
Other Heterostructure Devices
Overview: Other Heterostructure Devices; J.D. Cressler
Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser
IMPATT Diodes; E. Kasper and M. Oehme
Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald
Self-Assembling Nanostructures in Ge(Si)–Si Heteroepitaxy; R. Hull
Optoelectronic Components
Overview: Optoelectronic Components; J.D. Cressler
Si–SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim
Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto
Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving
Si–SiGe Quantum Cascade Emitters; D.J. Paul
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi

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