1st Edition

Silicon Heterostructure Devices

By John D. Cressler Copyright 2008
    466 Pages 302 B/W Illustrations
    by CRC Press

    SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

    Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

    The Big Picture; J.D. Cressler
    A Brief History of the Field; J.D. Cressler
    SiGe HBTs
    Overview: SiGe HBTs; J.D. Cressler
    Device Physics; J.D. Cressler
    Second-Order Effects; J.D. Cressler
    Low-Frequency Noise; G. Niu
    Broadband Noise; D.R. Greenberg
    Microscopic Noise Simulation; G. Niu
    Linearity; G. Niu
    pnp SiGe HBTs; J.D. Cressler
    Temperature Effects; J.D. Cressler
    Radiation Effects; J.D. Cressler
    Reliability Issues; J.D. Cressler
    Self-Heating and Thermal Effects; J-S. Rieh
    Device-Level Simulation; G. Niu
    SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg
    Heterostructure FETs
    Overview: Heterostructure FETs; J.D. Cressler
    Biaxial Strained Si CMOS; K. Rim
    Uniaxial Stressed Si MOSFET; S.E. Thompson
    SiGe-Channel HFETs; S. Banerjee
    Industry Examples at State-of-the-Art: Intel’s 90 nm Logic Technologies; S.E. Thompson
    Other Heterostructure Devices
    Overview: Other Heterostructure Devices; J.D. Cressler
    Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser
    IMPATT Diodes; E. Kasper and M. Oehme
    Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald
    Self-Assembling Nanostructures in Ge(Si)–Si Heteroepitaxy; R. Hull
    Optoelectronic Components
    Overview: Optoelectronic Components; J.D. Cressler
    Si–SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim
    Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto
    Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving
    Si–SiGe Quantum Cascade Emitters; D.J. Paul
    Properties of Silicon and Germanium; J.D. Cressler
    The Generalized Moll-Ross Relations; J.D. Cressler
    Integral Charge-Control Relations; M. Schröter
    Sample SiGe HBT Compact Model Parameters; R.M. Malladi


    John D. Cressler