1st Edition

Silicon Heterostructure Handbook Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

Edited By John D. Cressler Copyright 2005
1248 Pages 871 B/W Illustrations
by CRC Press

1248 Pages 871 B/W Illustrations
by CRC Press

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices,... Read more
Foreword; B.S. Meyerson
INTRODUCTION
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe AND Si STRAINED-LAYER EPITAXY
Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
MBE Growth Techniques; M. Oehme and E. Kasper
UHV/CVD Growth Techniques; T.N. Adam
Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
Stability Constraints in SiGe Epitaxy; A. Fischer
Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J.L. Hoyt
Carbon Doping of SiGe; H.J. Osten
Contact Metallization on Silicon-Germanium; C.K. Maiti
Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
FABRICATION OF SiGe HBT BiCMOS TECHNOLOGY
Overview: Fabrication of SiGe HBT BiCMOS Technology; J.D. Cressler
Device Structures and BiCMOS Integration; D.L. Harame
SiGe HBTs on CMOS-Compatible SOI; J. Cai and T.H. Ning
Passive Components; J.N. Burghartz
Industry Examples at State-of-the-Art: IBM; A.J. Joseph and J.S. Dunn
Industry Examples at State-of-the-Art: Jazz; P.H.G. Kempf
Industry Examples at State-of-the-Art: Hitachi; K. Washio
Industry Examples at State-of-the-Art: Infineon; T.F. Meister, H. Schäfer, W. Perndl, and J. Böck
Industry Examples at State-of-the-Art: IHP; D. Knoll
Industry Examples at State-of-the-Art: ST; A. Chantre, M. Laurens, B. Szelag, H. Baudry, P. Chevalier, J. Mourier, G. Troillard, B. Martinet, M. Marty, and A. Monroy
Industry Examples at State-of-the-Art: Texas Instruments; B. El-Kareh, S. Balster, P. Steinmann, and H. Yasuda
Industry Examples at State-of-the-Art: Philips; R. Colclaser and P. Deixler
SiGe HBTs
Overview: SiGe HBTs; J.D. Cressler
Device Physics; J.D. Cressler
Second-Order Effects; J.D. Cressler
Low-Frequency Noise; G. Niu
Broadband Noise; D.R. Greenberg
Microscopic Noise Simulation; G. Niu
Linearity; G. Niu
pnp SiGe HBTs; J.D. Cressler
Temperature Effects; J.D. Cressler
Radiation Effects; J.D. Cressler
Reliability Issues; J.D. Cressler
Self-Heating and Thermal Effects; J-S. Rieh
Device-Level Simulation; G. Niu
SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg
HETEROSTRUCTURE FETs
Overview: Heterostructure FETs; J.D. Cressler
Biaxial Strained Si CMOS; K. Rim
Uniaxial Stressed Si MOSFET; S.E. Thompson
SiGe-Channel HFETs; S. Banerjee
Industry Examples at State-of-the-Art: Intel's 90 nm Logic Technologies; S.E. Thompson
OTHER HETEROSTRUCTURE DEVICES
Overview: Other Heterostructure Devices; J.D. Cressler
Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser
IMPATT Diodes; E. Kasper and M. Oehme
Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald
Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R. Hull
OPTOELECTRONIC COMPONENTS
Overview: Optoelectronic Components; J.D. Cressler
Si-SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim
Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto
Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving
Si-SiGe Quantum Cascade Emitters; D.J. Paul
MEASUREMENT AND MODELING
Overview: Measurement and Modeling; J.D. Cressler
Best-Practice AC Measurement Techniques; R.A. Groves
Industrial Application of TCAD for SiGe Development; D.C. Sheridan, J.B. Johnson, and R. Krishnasamy
Compact Modeling of SiGe HBTs: HICUM; M. Schröter
Compact Modeling of SiGe HBTs: MEXTRAM; S. Mijalkovic
CAD Tools and Design Kits; S.E. Strang
Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs; R. Singh
Transmission Lines on Si; Y.V. Tretiakov
Improved De-Embedding Techniques; Q. Liang
CIRCUITS AND APPLICATIONS
Overview: Circuits and Applications; J.D. Cressler
SiGe as an Enabler for Wireless Communications Systems; L.E. Larson and D.Y.C. Lie
LNA Optimization Strategies; Q. Liang
Linearization Techniques; L.C.N. de Vreede and M.P. van der Heijden
SiGe MMICs; H. Schumacher
SiGe Millimeter-Wave ICs; J-F. Luy
Wireless Building Blocks Using SiGe HBTs; J.R. Long
Direct Conversion Architectures for SiGe Radios; S. Chakraborty and J. Laskar
RF MEMS Techniques in Si/SiGe; J. Papapolymerou
Wideband Antennas on Silicon; M.M. Tentzeris and R.L. Li
Packaging Issues for SiGe Circuits; K. Lim, S. Pinel, and J. Laskar
Industry Examples at State-of-the-Art: IBM; D.J. Friedman and M. Meghelli
Industry Examples at State-of-the-Art: Hitachi; K. Washio
Industry Examples at State-of-the-Art: ST; D. Belot
APPENDICES
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi
INDEX

Biography

Cressler, John D.

"…a collection of 28 high-quality reviews rich in references, is a great success. The impact could go even further. I was very impressed on first reading, I was also very surprised by the contributors, since they are mostly eminent and very active in the field, though relatively young and representative of future trends. I was also excited by the up-to-date research content. Finally, this book will undoubtedly be an essential reference for researchers and an introduction for students just starting in the field."
-Bao-Lian Su, Materials Today, Vol. 9, No. 1-2, Jan-Feb. 2006