1st Edition

Silicon-Molecular Beam Epitaxy Volume I

By E. Kasper Copyright 1988
260 Pages
by CRC Press

260 Pages
by CRC Press

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are... Read more
1. Introduction 2. Si-MBE Growth Systems � Technology and Practice 3. Homoepitaxy 4. Models of Silicon Growth and Dopant Incorporation 5. Insulator over Silicon Structures 6. Growth Insulators on Si by MBE 7. Device Application: Work to Date 8. Device Application- Possibilities

Biography

E. Kasper