1st Edition

Silicon and Silicide Nanowires
Applications, Fabrication, and Properties




ISBN 9789814303460
Published October 24, 2013 by Jenny Stanford Publishing
484 Pages 8 Color & 179 B/W Illustrations

USD $160.00

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Book Description

Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.

Table of Contents

In Situ Observations of Vapor–Liquid–Solid Growth of Silicon Nanowires, S. Kodambaka
Introduction
Experimental 4
Silicon Nanowire Nucleation Kinetics
Silicon Nanowire Growth Kinetics
Summary and Outlook

Growth of Germanium, Silicon, and Ge–Si Heterostructured Nanowires,
Shadi A. Dayeh and S. Thomas Picraux
Introduction 23
The VLS Growth Mechanism
Size Effects in Nanowire Growth
Temperature Effects on Nanowire Growth
Pressure Effects on Nanowire Growth
Dopant Precursor Influence on Nanowire Growth
Defects during VLS Growth of Semiconductor Nanowires
Ge Core/Si Shell Heterostructured Nanowires
Unique Opportunities for Bandgap Engineering in Semiconductor Nanowires
Conclusions

Transition Metal Silicide Nanowires: Synthetic Methods and Applications,
Jeremy M. Higgins, Andrew L. Schmitt, and Song Jin
Introduction
Formation of Bulk and Thin-Film Metal Silicides in Diffusion Couples
Silicide Nanowire Growth Techniques
Conclusion

Metal Silicide Nanowires: Growth and Properties, L. J. Chen and W. W. Wu
Introduction
Epitaxial Growth of Silicide Nanowires on Si Substrate
Growth of Free-Standing Silicide Nanowires and Their Properties
Formation of Silicide/Si/Silicide Nano-Heterostructures from Si Nanowires
Conclusions

Formation of Epitaxial Silicide in Silicon Nanowires,
Yi-Chia Chou, Kuo-Chang Lu, and King-Ning Tu
Introduction
Introduction to Solid-State Phase Transformation in Thin Film
Nanoscale Silicide Formation by Point Contact Reaction between Ni/Co and Si Nanowires
Homogeneous Nucleation of Nanoscale Silicide Formation
Conclusion

Interaction between Inverse Kirkendall Effect and Kirkendall Effect in Nanoshells and Nanowires,
A. M. Gusak and T. V. Zaporozhets
Introduction
Basic Notions
Instability of Hollow Nanostructures
Formation of Hollow Shells
Cross-Over from Formation to Collapse

Electrical Transport Properties of Doped Silicon Nanowires, Aya Seike and Iwao Ohdomari
Introduction
Fabrication Processes and Electrical Measurements
Introduction of Strain into Nanowire Channels by Oxidation, and Evaluation of Stress within Individual Nanowires
Electrical Characterization of Nanowire FETs
Summary

Silicon Nanowires and Related Nanostructures as Lithium-Ion Battery Anodes,
Liangbing Hu, Lifeng Cui, Seung Sae Hong, James McDonough, and Yi Cui
Lithium-Ion Batteries and Different Types of Anodes
Advantages and Challenges of Silicon Anodes
Thin Film Silicon Anodes and Microsized Particles
Vapor–Liquid–Solid (VLS)-Grown SiNWs as High-Capacity Anode
Surface Characterization and Electrochemical Analysis of the Solid–Electrolyte Interphase (SEI) on Silicon Nanowires
Si Core–Shell Structures for Anodes
Other Si Nanostructures
Solution-Processed Si Nanostructures
Some Fundamental Aspects
Remaining Challenges and Commercialization

Porous Silicon Nanowires,
Yongquan Qu and Xiangfeng Duan
Introduction
Synthesis of Porous Silicon Nanowires
Properties of Porous Silicon Nanowire
Applications of Porous Silicon Nanowire
Conclusion

Nanoscale Contact Engineering for Si Nanowire Devices,
Yung-Chen Lin and Yu Huang
Scope of the Chapter
Introduction
Synthetic Approaches to Nanoscale Silicides
Contact Formation through Solid-State Reaction
Silicide Growth Mechanism
New Technical Approaches or Structures for Low-Contact Resistance FET and Short-Channel Device
Electronic Properties of Silicide NWs and Silicide/Si/Silicide Heterostructures
Conclusion
Index

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Editor(s)

Biography

Yu Huang is a faculty member in the Department of Materials Sciences and Engineering at the University of California, Los Angeles (UCLA), USA. She received her PhD in physical chemistry from Harvard University, USA. Her research focuses on the fundamental principles governing nanoscale material synthesis and assembly at the molecular level, which can be utilized to design nanostructures and nanodevices with unique functions and properties to address critical challenges in electronics, energy science, and biomedicine. She has received several recognitions including MRS student award, the Grant Prize Winner of Collegiate Inventors’ Competition, the IUPAC Young Chemist Prize, Lawrence Postdoctoral Fellowship, MIT Technology Review World’s Top 100 Young Innovator Award, NASA Nanotech Brief Nano 50 Innovator award, the Kavli Fellowship, the Sloan Fellowship, the PECASE, DARPA Young Faculty Award and, the NIH Director’s New Innovator Award.

King-Ning Tu received his PhD in applied physics from Harvard University in 1968 and was associated with IBM T. J. Watson Research Center for 25 years before joining the UCLA, USA, in 1993. He is distinguished professor in the Department of Materials Science and Engineering and the Department of Electrical Engineering at the UCLA. He has over 500 journal publications with citations over 18,000 and h-factor of 74. He received the TMS John Bardeen Award in 2013. He has co-authored the textbook Electronic Thin Film Science and authored the books Solder Joint Technology: Materials, Properties, and Reliability and Electronic Thin-Film Reliability. His research interests are focused on metal–silicon reactions, solder joint reactions, point-contact reactions in nanowires, polarity effect of electromigration on interfacial reactions, and kinetic theories of interfacial reactions.