Silicon and Silicide Nanowires: Applications, Fabrication, and Properties, 1st Edition (Hardback) book cover

Silicon and Silicide Nanowires

Applications, Fabrication, and Properties, 1st Edition

Edited by Yu Huang, King-Ning Tu

Jenny Stanford Publishing

484 pages | 8 Color Illus. | 179 B/W Illus.

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Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.

Table of Contents

In Situ Observations of Vapor–Liquid–Solid Growth of Silicon Nanowires, S. Kodambaka


Experimental 4

Silicon Nanowire Nucleation Kinetics

Silicon Nanowire Growth Kinetics

Summary and Outlook

Growth of Germanium, Silicon, and Ge–Si Heterostructured Nanowires, Shadi A. Dayeh and S. Thomas Picraux

Introduction 23

The VLS Growth Mechanism

Size Effects in Nanowire Growth

Temperature Effects on Nanowire Growth

Pressure Effects on Nanowire Growth

Dopant Precursor Influence on Nanowire Growth

Defects during VLS Growth of Semiconductor Nanowires

Ge Core/Si Shell Heterostructured Nanowires

Unique Opportunities for Bandgap Engineering in Semiconductor Nanowires


Transition Metal Silicide Nanowires: Synthetic Methods and Applications, Jeremy M. Higgins, Andrew L. Schmitt, and Song Jin


Formation of Bulk and Thin-Film Metal Silicides in Diffusion Couples

Silicide Nanowire Growth Techniques


Metal Silicide Nanowires: Growth and Properties, L. J. Chen and W. W. Wu


Epitaxial Growth of Silicide Nanowires on Si Substrate

Growth of Free-Standing Silicide Nanowires and Their Properties

Formation of Silicide/Si/Silicide Nano-Heterostructures from Si Nanowires


Formation of Epitaxial Silicide in Silicon Nanowires, Yi-Chia Chou, Kuo-Chang Lu, and King-Ning Tu


Introduction to Solid-State Phase Transformation in Thin Film

Nanoscale Silicide Formation by Point Contact Reaction between Ni/Co and Si Nanowires

Homogeneous Nucleation of Nanoscale Silicide Formation


Interaction between Inverse Kirkendall Effect and Kirkendall Effect in Nanoshells and Nanowires, A. M. Gusak and T. V. Zaporozhets


Basic Notions

Instability of Hollow Nanostructures

Formation of Hollow Shells

Cross-Over from Formation to Collapse

Electrical Transport Properties of Doped Silicon Nanowires, Aya Seike and Iwao Ohdomari


Fabrication Processes and Electrical Measurements

Introduction of Strain into Nanowire Channels by Oxidation, and Evaluation of Stress within Individual Nanowires

Electrical Characterization of Nanowire FETs


Silicon Nanowires and Related Nanostructures as Lithium-Ion Battery Anodes, Liangbing Hu, Lifeng Cui, Seung Sae Hong, James McDonough, and Yi Cui

Lithium-Ion Batteries and Different Types of Anodes

Advantages and Challenges of Silicon Anodes

Thin Film Silicon Anodes and Microsized Particles

Vapor–Liquid–Solid (VLS)-Grown SiNWs as High-Capacity Anode

Surface Characterization and Electrochemical Analysis of the Solid–Electrolyte Interphase (SEI) on Silicon Nanowires

Si Core–Shell Structures for Anodes

Other Si Nanostructures

Solution-Processed Si Nanostructures

Some Fundamental Aspects

Remaining Challenges and Commercialization

Porous Silicon Nanowires, Yongquan Qu and Xiangfeng Duan


Synthesis of Porous Silicon Nanowires

Properties of Porous Silicon Nanowire

Applications of Porous Silicon Nanowire


Nanoscale Contact Engineering for Si Nanowire Devices, Yung-Chen Lin and Yu Huang

Scope of the Chapter


Synthetic Approaches to Nanoscale Silicides

Contact Formation through Solid-State Reaction

Silicide Growth Mechanism

New Technical Approaches or Structures for Low-Contact Resistance FET and Short-Channel Device

Electronic Properties of Silicide NWs and Silicide/Si/Silicide Heterostructures



About the Editors

Yu Huang is a faculty member in the Department of Materials Sciences and Engineering at the University of California, Los Angeles (UCLA), USA. She received her PhD in physical chemistry from Harvard University, USA. Her research focuses on the fundamental principles governing nanoscale material synthesis and assembly at the molecular level, which can be utilized to design nanostructures and nanodevices with unique functions and properties to address critical challenges in electronics, energy science, and biomedicine. She has received several recognitions including MRS student award, the Grant Prize Winner of Collegiate Inventors’ Competition, the IUPAC Young Chemist Prize, Lawrence Postdoctoral Fellowship, MIT Technology Review World’s Top 100 Young Innovator Award, NASA Nanotech Brief Nano 50 Innovator award, the Kavli Fellowship, the Sloan Fellowship, the PECASE, DARPA Young Faculty Award and, the NIH Director’s New Innovator Award.

King-Ning Tu received his PhD in applied physics from Harvard University in 1968 and was associated with IBM T. J. Watson Research Center for 25 years before joining the UCLA, USA, in 1993. He is distinguished professor in the Department of Materials Science and Engineering and the Department of Electrical Engineering at the UCLA. He has over 500 journal publications with citations over 18,000 and h-factor of 74. He received the TMS John Bardeen Award in 2013. He has co-authored the textbook Electronic Thin Film Science and authored the books Solder Joint Technology: Materials, Properties, and Reliability and Electronic Thin-Film Reliability. His research interests are focused on metal–silicon reactions, solder joint reactions, point-contact reactions in nanowires, polarity effect of electromigration on interfacial reactions, and kinetic theories of interfacial reactions.

Subject Categories

BISAC Subject Codes/Headings:
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics