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Single-Atom Nanoelectronics




ISBN 9789814316316
Published April 17, 2013 by Jenny Stanford Publishing
380 Pages 33 Color & 108 B/W Illustrations

 
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Book Description

Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology.

Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.

Table of Contents

Preface
Introduction Asen Asenov
Quantum Information in Silicon Devices Based on Individual Dopants Enrico Prati and Andrea Morello
Physics of Impurities in Silicon
Topology of Individual Donors Embedded in Silicon Devices
Quantum Information with Donors in Silicon
Electron Spin Qubits with Donors
Coherent Passage of Information
Decoherence
Quantum Nondemolition Measurements of Single-Donor Nuclear and Electron Spins
Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon Rajib Rahman, Lloyd C. L. Hollenberg, and Gerhard Klimeck
Tight-Binding Method and NEMO-3D
Electronic Structure of a Group V Donor in Bulk Silicon
Donor Qubits in Silicon
Orbital Stark Effect of Donors in Nanostructures
Hyperfine Stark Effect
Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices Martin Fuechsle and Michelle Y. Simmons
Outline of the Fabrication Strategy
All-Epitaxial Dopant-Based Quantum Dots
Downscaling of Dopant-Based Devices
Toward Deterministic Single-Atom Devices
Toward a Planar Qubit Architecture
Deterministic Single-Ion Implantation Method for Extending CMOS Technologies Takahiro Shinada
The Importance of Deterministic Doping
Single-Ion Implantation Method
Ordered Dopant Arrays
Asymmetric Ordered Dopant Effects on Transistor Performances
Quantum Transport in Deterministically Implanted Single Donors
Future Issues
Single-Ion Implantation for Quantum Computing David N. Jamieson
Quantum Computation
Single-Ion Implantation
Future Prospects
Future Perspectives
Single Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography Koji Inoue and Yasuyoshi Nagai
Introduction to the Single Atom Imaging
Atom Probe Tomography
Dopant Distribution in a MOSFET
Dopant Distribution in FinFETs
Future Prospects for APT
Low-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature Filippo Guagliardo and Giorgio Ferrari
Fundamentals of Current Measurements
Design Rules for Low-Noise Transimpedance Amplifiers
Wide-Band Transimpedance Amplifiers
Cryogenic CMOS Amplifiers: Challenges and Opportunities
General Considerations
Orbital Structure and Transport Characteristics of Single Donors Jan Verduijn, Giuseppe C. Tettamanzi, and Sven Rogge
Literature Review
Structure of the Device
Eigenstates of a Single Donor
Future Perspectives
Single-Donor Transport Spectroscopy in Ultimate Silicon Transistors Marc Sanquer and Xavier Jehl
Variability in Ultimate Silicon Transistors
CMOS Processes for Single-Atom Transistors
Low-Temperature Spectroscopy and Correlation with 300 K Behavior
Advantages of the Size Reduction in Single-Atom Transistors
What can we Learn from Low-Temperature Transport Spectroscopy in a Single, Shallow Dopant?
A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon Thomas Schenkel, Cheuk Chi Lo, Christoph D. Weis, Jeffrey Bokor, Alexei M. Tyryshkin, and Stephen A. Lyon
General Considerations
Coupled Donor–Quantum Dot Spin Qubits
Coherence of Donor Spins in 28Silicon
Elements of Device Fabrication for Donor–Dot Spin Qubits
Placement of Single Donors
Single-Ion Implantation
Single Spins in Diamond: Novel Quantum Devices and Atomic Sensors Fedor Jelezko
Defects in Diamond
Optical Properties of NV Defects
Spin Properties and Spin Readout
Diamond Quantum Registers
Applications of Single-Color Centers for Novel Imaging Techniques
Magnetometry with Single Diamond Spins
Future Perspectives
Silicon-Based Single-Dopant Devices and Integration with Photons Michiharu Tabe, Daniel Moraru, and Arief Udhiarto
Introduction—Integration of Single-Dopant Electronics and Single-Photon Detection
Single-Dopant Transistors in Dopant-Rich Environments—Dopant-Based Functionalities
Effects of Photon Illumination on Doped-Nanowire SOI Transistors
Future Directions
Circuits with Single-Atom Devices Jan A. Mol and Sven Rogge
Single-Atom Devices for Circuits
 Hybrid Circuits
Full Addition Using a Single-Atom Transistor
Index

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Editor(s)

Biography

Enrico Prati received a bachelor’s in theoretical physics in 1998 from the University of Pisa and a PhD in physics in 2002. From 2003 to 2008, he worked at Istituto Nazionale di Fisica della Materia (INFM) and from 2009 he is permanent researcher of Istituto per la Microelettronica e Microsistemi (IMM) of Consiglio Nazionale delle Ricerche (CNR) in Agrate Brianza. In February 2004 he received the Young Scientist Award from the URSI for his work on negative refractive index propagation and metamaterials. From 2011, he has contributed to the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) Committee on deterministic doping. His present research fields are both theoretical and experimental aspects of low-dimensional electron systems, quantum transport, deterministic doping for More than Moore applications, and quantum information in solid state. At present Dr. Prati is secretary of the Associazione Italiana per la Ricerca (www.associazionericerca.it) .

Takahiro Shinada received a PhD in engineering in 2000 and an MBA in technology management in 2007 from Waseda University. From 2000 to 2012 he worked at Waseda University, where he was promoted to associate professor in 2006. Since 2012 he has been with the National Institute of Advanced Industrial Science and Technology (AIST), serving as the senior officer for advanced nanodevice research. He is a member of the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices (ERD) and Emerging Research Materials (ERM) Chapters. His research concerns are deterministic doping in nanoelectronics for extended CMOS applications and its application in biological systems for environment, safety, and health (ESH) issues.

Reviews

"This collection of papers on single-atom nanoelectronics represents a unique view on current research in this exciting new area. From nanotechnology issues via devices and single transistors to circuits, it covers the whole field of single-atom electronics. I recommend the book to researchers and students in nanoscience and nanoelectronics."
—Dr. Jaap Hoekstra, Delft University of Technology