Single-Atom Nanoelectronics: 1st Edition (Hardback) book cover

Single-Atom Nanoelectronics

1st Edition

Edited by Enrico Prati, Takahiro Shinada

Jenny Stanford Publishing

380 pages | 33 Color Illus. | 108 B/W Illus.

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pub: 2013-04-17
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Description

Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology.

Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.

Reviews

"This collection of papers on single-atom nanoelectronics represents a unique view on current research in this exciting new area. From nanotechnology issues via devices and single transistors to circuits, it covers the whole field of single-atom electronics. I recommend the book to researchers and students in nanoscience and nanoelectronics."

—Dr. Jaap Hoekstra, Delft University of Technology

Table of Contents

Preface

Introduction Asen Asenov

Quantum Information in Silicon Devices Based on Individual Dopants Enrico Prati and Andrea Morello

Physics of Impurities in Silicon

Topology of Individual Donors Embedded in Silicon Devices

Quantum Information with Donors in Silicon

Electron Spin Qubits with Donors

Coherent Passage of Information

Decoherence

Quantum Nondemolition Measurements of Single-Donor Nuclear and Electron Spins

Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon Rajib Rahman, Lloyd C. L. Hollenberg, and Gerhard Klimeck

Tight-Binding Method and NEMO-3D

Electronic Structure of a Group V Donor in Bulk Silicon

Donor Qubits in Silicon

Orbital Stark Effect of Donors in Nanostructures

Hyperfine Stark Effect

Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices Martin Fuechsle and Michelle Y. Simmons

Outline of the Fabrication Strategy

All-Epitaxial Dopant-Based Quantum Dots

Downscaling of Dopant-Based Devices

Toward Deterministic Single-Atom Devices

Toward a Planar Qubit Architecture

Deterministic Single-Ion Implantation Method for Extending CMOS Technologies Takahiro Shinada

The Importance of Deterministic Doping

Single-Ion Implantation Method

Ordered Dopant Arrays

Asymmetric Ordered Dopant Effects on Transistor Performances

Quantum Transport in Deterministically Implanted Single Donors

Future Issues

Single-Ion Implantation for Quantum Computing David N. Jamieson

Quantum Computation

Single-Ion Implantation

Future Prospects

Future Perspectives

Single Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography Koji Inoue and Yasuyoshi Nagai

Introduction to the Single Atom Imaging

Atom Probe Tomography

Dopant Distribution in a MOSFET

Dopant Distribution in FinFETs

Future Prospects for APT

Low-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature Filippo Guagliardo and Giorgio Ferrari

Fundamentals of Current Measurements

Design Rules for Low-Noise Transimpedance Amplifiers

Wide-Band Transimpedance Amplifiers

Cryogenic CMOS Amplifiers: Challenges and Opportunities

General Considerations

Orbital Structure and Transport Characteristics of Single Donors Jan Verduijn, Giuseppe C. Tettamanzi, and Sven Rogge

Literature Review

Structure of the Device

Eigenstates of a Single Donor

Future Perspectives

Single-Donor Transport Spectroscopy in Ultimate Silicon Transistors Marc Sanquer and Xavier Jehl

Variability in Ultimate Silicon Transistors

CMOS Processes for Single-Atom Transistors

Low-Temperature Spectroscopy and Correlation with 300 K Behavior

Advantages of the Size Reduction in Single-Atom Transistors

What can we Learn from Low-Temperature Transport Spectroscopy in a Single, Shallow Dopant?

A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon Thomas Schenkel, Cheuk Chi Lo, Christoph D. Weis, Jeffrey Bokor, Alexei M. Tyryshkin, and Stephen A. Lyon

General Considerations

Coupled Donor–Quantum Dot Spin Qubits

Coherence of Donor Spins in 28Silicon

Elements of Device Fabrication for Donor–Dot Spin Qubits

Placement of Single Donors

Single-Ion Implantation

Single Spins in Diamond: Novel Quantum Devices and Atomic Sensors Fedor Jelezko

Defects in Diamond

Optical Properties of NV Defects

Spin Properties and Spin Readout

Diamond Quantum Registers

Applications of Single-Color Centers for Novel Imaging Techniques

Magnetometry with Single Diamond Spins

Future Perspectives

Silicon-Based Single-Dopant Devices and Integration with Photons Michiharu Tabe, Daniel Moraru, and Arief Udhiarto

Introduction—Integration of Single-Dopant Electronics and Single-Photon Detection

Single-Dopant Transistors in Dopant-Rich Environments—Dopant-Based Functionalities

Effects of Photon Illumination on Doped-Nanowire SOI Transistors

Future Directions

Circuits with Single-Atom Devices Jan A. Mol and Sven Rogge

Single-Atom Devices for Circuits

Hybrid Circuits

Full Addition Using a Single-Atom Transistor

Index

About the Editors

Enrico Prati received a bachelor’s in theoretical physics in 1998 from the University of Pisa and a PhD in physics in 2002. From 2003 to 2008, he worked at Istituto Nazionale di Fisica della Materia (INFM) and from 2009 he is permanent researcher of Istituto per la Microelettronica e Microsistemi (IMM) of Consiglio Nazionale delle Ricerche (CNR) in Agrate Brianza. In February 2004 he received the Young Scientist Award from the URSI for his work on negative refractive index propagation and metamaterials. From 2011, he has contributed to the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) Committee on deterministic doping. His present research fields are both theoretical and experimental aspects of low-dimensional electron systems, quantum transport, deterministic doping for More than Moore applications, and quantum information in solid state. At present Dr. Prati is secretary of the Associazione Italiana per la Ricerca (www.associazionericerca.it) .

Takahiro Shinada received a PhD in engineering in 2000 and an MBA in technology management in 2007 from Waseda University. From 2000 to 2012 he worked at Waseda University, where he was promoted to associate professor in 2006. Since 2012 he has been with the National Institute of Advanced Industrial Science and Technology (AIST), serving as the senior officer for advanced nanodevice research. He is a member of the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices (ERD) and Emerging Research Materials (ERM) Chapters. His research concerns are deterministic doping in nanoelectronics for extended CMOS applications and its application in biological systems for environment, safety, and health (ESH) issues.

Subject Categories

BISAC Subject Codes/Headings:
SCI055000
SCIENCE / Physics
TEC008000
TECHNOLOGY & ENGINEERING / Electronics / General