Spintronics Handbook, Second Edition: Spin Transport and Magnetism : Volume One: Metallic Spintronics book cover
2nd Edition

Spintronics Handbook, Second Edition: Spin Transport and Magnetism
Volume One: Metallic Spintronics

ISBN 9781498769525
Published May 21, 2019 by CRC Press
750 Pages 285 B/W Illustrations

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Book Description

Spintronics Handbook, Second Edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Table of Contents

Volume 1. Metallic Spintronics

Section I. Introduction

1. Historical Overview: From Electron Transport in Magnetic Materials to Spintronics
Albert Fert

Section II. Magnetic Metallic Multilayers

2. Basics of Nano-thin Film Magnetism
Bretislav Heinrich, Paul Omelchenko, and Erol Girt

3. Micromagnetism as a Prototype for Complexity
Anthony S. Arrott

4. Giant Magnetoresistance
Jack Bass

5. Spin Injection, Accumulation and Relaxation in Metals
Mark Johnson

6. Magnon Spintronics: Fundamentals of Magnon-based Computing
Andrii V. Chumak

7. Spin Torque Effects in Magnetic Systems: Experiment
Maxim Tsoi

8. Spin Torque in Magnetic Systems: Theory
A. Manchon and S. Zhang

9. Spin-Orbit Torques: Experiments and Theory
Aurélien Manchon and Hyunsoo Yang

10. All-Optical Switching of Magnetization: From Fundamentals to Nanoscale Recording
Andrei Kirilyuk, Alexey V. Kimel, and Theo Rasing

Section III. Magnetic Tunnel Junctions

11. Tunneling Magnetoresistance: Experiment (Non-MgO)
Patrick R. LeClair and Jagadeesh S. Moodera

12. Tunnel Magnetoresistance in MgO-based Magnetic Tunnel Junctions: Experiment
Shinji Yuasa

13. Tunneling Magnetoresistance: Theory
Kirill D. Belashchenko and Evgeny Y. Tsymbal

14. Spin Filter Tunneling
Tiffany S. Santos and Jagadeesh S. Moodera

15. Spin-Injection Torque in Magnetic Tunnel Junctions
Yoshishige Suzuki and Hitoshi Kubota

16. Phase-sensitive Interface and Proximity Effects in Superconducting Spintronics
Matthias Eschrig

17. Multiferroic Tunnel Junctions
Manuel Bibes and Agnès Barthélémy

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Evgeny Tsymbal is a George Holmes University Distinguished Professor at the Department of Physics and Astronomy of the University of Nebraska-Lincoln (UNL), Director of the UNL’s Materials Research Science and Engineering Center (MRSEC), and Director of the multi-institutional Center for NanoFerroic Devices (CNFD). Evgeny Tsymbal’s research is focused on computational materials science aiming at the understanding of fundamental properties of advanced ferromagnetic and ferroelectric nanostructures and materials relevant to nanoelectronics and spintronics. He is a fellow of the American Physical Society, a fellow of the Institute of Physics, UK, and a recipient of the UNL’s College of Arts & Sciences Outstanding Research and Creativity Award (ORCA).

Igor Žutić is a Professor of Physics at the University at Buffalo, the State University of New York. His work spans topics from high-temperature superconductors, Majorana fermions, unconventional magnetism, proximity effects, and two-dimensional materials, to prediction of various spin-based devices that are not limited to the concept of magnetoresistance used in commercial application for magnetically stored information. Such devices, including spin photodiodes, spin solar cells, spin transistors, and spin lasers (front cover illustration) have already been experimentally demonstrated. Igor Žutic´ is a fellow of the American Physical Society, a recipient of 2006 National Science Foundation CAREER Award, and 2019 State University of New York Chancellor’s Award for Excellence.

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