Spintronics Handbook, Second Edition: Spin Transport and Magnetism : Volume Two: Semiconductor Spintronics book cover
2nd Edition

Spintronics Handbook, Second Edition: Spin Transport and Magnetism
Volume Two: Semiconductor Spintronics

ISBN 9781498769600
Published June 10, 2019 by CRC Press
638 Pages 182 B/W Illustrations

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Book Description

The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Table of Contents

Volume 2. Semiconductor Spintronics

Section IV. Spin Transport and Dynamics in Semiconductors

1. Spin Relaxation and Spin Dynamics in Semiconductors and Graphene
Jaroslav Fabian and M. W. Wu

2. Electrical Spin Injection and Transport in Semiconductors
Berend T. Jonker

3. Spin Transport in Si and Ge: Hot Electron Injection and Detection Experiments
Ian Appelbaum

4. Tunneling Magnetoresistance, Spin-Transfer and Spinorbitronics with (Ga,Mn)As
Jean Marie George, T. Huong Dang, E. Erina, T. L. Hoai Nguyen, H.-J. Drouhin, Henri Jaffrès

5. Spin Transport in Organic Semiconductors
Valentin Dediu, Luis E. Hueso, and Ilaria Bergenti

6. Spin Transport in Ferromagnet/III-V Semiconductor Heterostructures
Paul A. Crowell and Scott A. Crooker

7. Spin Polarization by Current
Sergey D. Ganichev, Maxim Trushin, and John Schliemann

8. Anomalous and Spin-Injection Hall Effects
Jairo Sinova, Joerg Wunderlich, and Tomas Jungwirth

Section V. Magnetic Semiconductors, Oxides and Topological Insulators

9. Magnetic Semiconductors: III-V Semiconductors
Carsten Timm

10. Magnetism of Dilute Oxides
J. M. D. Coey

11. Magnetism of Complex Oxide Interfaces
Satoshi Okamoto, Shuai Dong, and Elbio Dagotto

12. LaAlO3/SrTiO3: A Tale of Two Magnetisms
Yun-Yi Pai, Anthony Tylan-Tyler, Patrick Irvin, and Jeremy Levy

13. Electric-field Controlled Magnetism
Fumihiro Matsukura and Hideo Ohno

14. Topological Insulators: From Fundamentals to Applications
Matthew J. Gilbert and Ewelina M. Hankiewicz

15. Quantum Anomalous Hall Effect in Topological Insulators
Abhinav Kandala, Anthony Richardella, and Nitin Samarth

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Evgeny Tsymbal is a George Holmes University Distinguished Professor at the Department of Physics and Astronomy of the University of Nebraska-Lincoln (UNL), Director of the UNL’s Materials Research Science and Engineering Center (MRSEC), and Director of the multi-institutional Center for NanoFerroic Devices (CNFD). Evgeny Tsymbal’s research is focused on computational materials science aiming at the understanding of fundamental properties of advanced ferromagnetic and ferroelectric nanostructures and materials relevant to nanoelectronics and spintronics. He is a fellow of the American Physical Society, a fellow of the Institute of Physics, UK, and a recipient of the Outstanding Research and Creativity Award (ORCA).

Igor Žutić is a Professor of Physics at the University at Buffalo, the State University of New York. His work spans topics from high-temperature superconductors, Majorana fermions, unconventional magnetism, proximity effects, and two-dimensional materials, to prediction of various spin-based devices that are not limited to the concept of magnetoresistance used in commercial application for magnetically stored information. Such devices, including spin photodiodes, spin solar cells, spin transistors, and spin lasers (front cover illustration) have already been experimentally demonstrated. Igor Žutic´ is a fellow of the American Physical Society, a recipient of 2006 National Science Foundation CAREER Award, and 2019 State University of New York Chancellor’s Award for Excellence.


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