Strain-Engineered MOSFETs: 1st Edition (Paperback) book cover

Strain-Engineered MOSFETs

1st Edition

By C.K. Maiti, T.K. Maiti

CRC Press

320 pages | 191 B/W Illus.

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Description

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale.

This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization.

Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Reviews

"… an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. Any scientist interested in strain modulation of device properties will value this book."

—Supriyo Bandyopadhyay,Virginia Commonwealth University

"… a timely bridge from the conventional MOSFETs to advanced strain-engineered MOSFETs to non-classical multiple gate devices to FinFETs. … I strongly recommend this book."

—Dr. Enrique MIRANDA,Universitat Autònoma de Barcelona

Table of Contents

Introduction

Technology Scaling

Substrate-Induced Strain Engineering

Process-Induced Stress Engineering

Electronic Properties of Strained Semiconductors

Strain-Engineered MOSFETs

Noise in Strain-Engineered Devices

Technology CAD of Strain-Engineered MOSFETs

Reliability of Strain-Engineered MOSFETs

Process Compact Modelling

Process-Aware Design

Summary

Additional Reading

Substrate-Induced Strain Engineering in CMOS Technology

Substrate Engineering

Strained SiGe Film Growth

Strained SiGe:C Film Growth

Strained Si Films on Relaxed Si1–xGex

Strained Si on SOI

Strained Ge Film Growth

Strained Ge MOSFETs

Heterostructure SiGe/SiGe:C Channel MOSFETs

Strained Si MOSFETs

Hybrid Orientation Technology

Summary

Review Questions

References

Process-Induced Stress Engineering in CMOS Technology

Stress Engineering

Si1–xGex in Source/Drain

Si1–yCy in Source/Drain

Shallow Trench Isolation (STI)

Contact Etch Stop Layer (CESL)

Silicidation

Stress Memorisation Technique (SMT)

Global vs. Local Strain

BEOL Stress: Through-Silicon Via

TSV Modelling

Summary

Review Questions

References

Electronic Properties of Strain-Engineered Semiconductors

Basics of Stress Engineering

Stress–Strain Relationships

Strain-Engineered MOSFETs: Current

Energy Gap and Band Structure

Silicon Conduction Band

Silicon Valence Band

Band Structure under Stress

Piezoresistive Mobility Model

Strain-Induced Mobility Model

Implementation of Mobility Model

Summary

Review Questions

References

Strain-Engineered MOSFETs

Process Integration

Multigate Transistors

Double-Gate MOSFET

Ω-FinFET

Tri-Gate FinFET

FinFETs Using Gate-Induced Stress

Stress-Engineered FinFETs

Layout Dependence

Summary

Review Questions

References

Noise in Strain-Engineered Devices, C. Mukherjee

Noise Mechanisms

Fundamental Noise Sources

1/f Noise in MOSFETs

Noise Characterisation in MOSFETs

Strain Effects on Noise in MOSFETs

Noise in Strain-Engineered MOSFETs

Noise in Multigate FETs

Noise in Silicon Nanowire Transistors (SNWTs)

Noise in Heterojunction Bipolar Transistors

Summary

Review Questions

References

Technology CAD of Strain-Engineered MOSFETs

TCAD Calibration

Simulation of Strain-Engineered MOSFETs

DC Performance

AC Performance

Hybrid Orientation Technology for Strain-Engineered MOSFETs

Simulation of Embedded SiGe MOSFETs

Summary

Review Questions

References

Reliability and Degradation of Strain-Engineered MOSFETs

NBTI in Strain-Engineered p-MOSFETs

Simulation of NBTI in p-MOSFETs

HCI in Strain-Engineered n-MOSFETs

Simulation of HCI in n-MOSFETs

Reliability Issues in FinFETs

Summary

Review Questions

References

Process Compact Modelling of Strain-Engineered MOSFETs

Process Variation

Predictive Technology Modelling

Process-Aware Design for Manufacturing

Process Compact Model

Process-Aware SPICE Parameter Extraction

Summary

Review Questions

References

Process-Aware Design of Strain-Engineered MOSFETs

Process Design Co-Optimisation

Classifications of Variation

Designs for Manufacturing and Yield Optimisation

Performance Optimisation

Manufacturability Optimisation

Summary

Review Questions

References

Conclusions

Index

Subject Categories

BISAC Subject Codes/Headings:
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General
TEC008070
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics
TEC021000
TECHNOLOGY & ENGINEERING / Material Science