Strained-Si Heterostructure Field Effect Devices: 1st Edition (Hardback) book cover

Strained-Si Heterostructure Field Effect Devices

1st Edition

By C.K Maiti, S Chattopadhyay, L.K Bera

CRC Press

440 pages | 299 B/W Illus.

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pub: 2007-01-11
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Description

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.

After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers. The book also describes silicon hetero-FETs in SiGe and SiGeC material systems, MOSFET performance enhancement, and process-induced stress simulation in MOSFETs.

From substrate materials and electronic properties to strained-Si/SiGe process technology and devices, the diversity of R&D activities and results presented in this book will no doubt spark further development in the field.

Table of Contents

INTRODUCTION

Heterostructure Field-Effect Devices

Substrate Engineering

Gate Dielectrics on Engineered Substrates

Strained-Si Technology: Process Integration

Nonclassical CMOS Structures

Strain-Engineered Hetero-FETs: Modeling and Simulation

STRAIN ENGINEERING IN MICROELECTRONICS

Stress Induced during Manufacturing

Global vs. Local Strain

Substrate-Induced Strain

Process-Induced Stress

Stress/Strain Analysis

STRAIN-ENGINEERED SUBSTRATES

Epitaxy

Heteroepitaxy and Strain Control

Engineered Substrates: Technology

Characterization of Strained Layers

Engineered Substrates

ELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES

Substrate-Induced Strained-Si

Carrier Lifetime

Mobility: Thickness Dependence

Mobility: Temperature Dependence

Diffusion in Strained-Si

Process-Induced Strained-Si

Uniaxial vs. Biaxial Strain Engineering

GATE DIELECTRICS ON ENGINEERED SUBSTRATES

Strained-Si MOSFET Structures

Thermal Oxidation of Strained-Si

Rapid Thermal Oxidation

Plasma Nitridation of Strained-Si

Effect of Surface Roughness

Effect of Strained-Si Layer Thickness

High-k Gate Dielectrics on Strained-Si

Gate Dielectrics on Ge

HETEROSTRUCTURE SiGe/SiGeC MOSFETS

SiGe/SiGeC:Material Parameters

SiGe Hetero-FETs: Structures and Operation

SiGe p-MOSFETs on SOI

SiGeC Hetero-FETs

SiGe-Based HEMTs

Design Issues

STRAINED-Si HETEROSTRUCTURE MOSFETS

Operating Principle

Uniaxial Stress: Process Flow

Strained-Si MOSFETs with SiC-Stressor

Biaxial Strain: Process Flow

Scaling of Strained-Si MOSFETs

Strained-Si MOSFETs: Reliability

Industry Example: TSMC

Industry Example: AMD

MODELING AND SIMULATION OF HETERO-FETS

Simulation of Hetero-FETs

Modeling of Strained-SiMaterial Parameters

Simulation of Strained-Si n-MOSFETs

Characterization of Strained-Si Hetero-FETs

TCAD: Strain-Engineered Hetero-FETs

SPICE Parameter Extraction

Performance Assessment

Summaries and References appear in each chapter.

About the Series

Series in Materials Science and Engineering

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Subject Categories

BISAC Subject Codes/Headings:
SCI055000
SCIENCE / Physics
SCI077000
SCIENCE / Solid State Physics
TEC021000
TECHNOLOGY & ENGINEERING / Material Science