1st Edition
Strained-Si Heterostructure Field Effect Devices
436 Pages
299 B/W Illustrations
by
CRC Press
440 Pages
by
CRC Press
Also available as eBook on:
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS... Read more
INTRODUCTION
Heterostructure Field-Effect Devices
Substrate Engineering
Gate Dielectrics on Engineered Substrates
Strained-Si Technology: Process Integration
Nonclassical CMOS Structures
Strain-Engineered Hetero-FETs: Modeling and Simulation
STRAIN ENGINEERING IN MICROELECTRONICS
Stress Induced during Manufacturing
Global vs. Local Strain
Substrate-Induced Strain
Process-Induced Stress
Stress/Strain Analysis
STRAIN-ENGINEERED SUBSTRATES
Epitaxy
Heteroepitaxy and Strain Control
Engineered Substrates: Technology
Characterization of Strained Layers
Engineered Substrates
ELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES
Substrate-Induced Strained-Si
Carrier Lifetime
Mobility: Thickness Dependence
Mobility: Temperature Dependence
Diffusion in Strained-Si
Process-Induced Strained-Si
Uniaxial vs. Biaxial Strain Engineering
GATE DIELECTRICS ON ENGINEERED SUBSTRATES
Strained-Si MOSFET Structures
Thermal Oxidation of Strained-Si
Rapid Thermal Oxidation
Plasma Nitridation of Strained-Si
Effect of Surface Roughness
Effect of Strained-Si Layer Thickness
High-k Gate Dielectrics on Strained-Si
Gate Dielectrics on Ge
HETEROSTRUCTURE SiGe/SiGeC MOSFETS
SiGe/SiGeC:Material Parameters
SiGe Hetero-FETs: Structures and Operation
SiGe p-MOSFETs on SOI
SiGeC Hetero-FETs
SiGe-Based HEMTs
Design Issues
STRAINED-Si HETEROSTRUCTURE MOSFETS
Operating Principle
Uniaxial Stress: Process Flow
Strained-Si MOSFETs with SiC-Stressor
Biaxial Strain: Process Flow
Scaling of Strained-Si MOSFETs
Strained-Si MOSFETs: Reliability
Industry Example: TSMC
Industry Example: AMD
MODELING AND SIMULATION OF HETERO-FETS
Simulation of Hetero-FETs
Modeling of Strained-SiMaterial Parameters
Simulation of Strained-Si n-MOSFETs
Characterization of Strained-Si Hetero-FETs
TCAD: Strain-Engineered Hetero-FETs
SPICE Parameter Extraction
Performance Assessment
Summaries and References appear in each chapter.
Heterostructure Field-Effect Devices
Substrate Engineering
Gate Dielectrics on Engineered Substrates
Strained-Si Technology: Process Integration
Nonclassical CMOS Structures
Strain-Engineered Hetero-FETs: Modeling and Simulation
STRAIN ENGINEERING IN MICROELECTRONICS
Stress Induced during Manufacturing
Global vs. Local Strain
Substrate-Induced Strain
Process-Induced Stress
Stress/Strain Analysis
STRAIN-ENGINEERED SUBSTRATES
Epitaxy
Heteroepitaxy and Strain Control
Engineered Substrates: Technology
Characterization of Strained Layers
Engineered Substrates
ELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES
Substrate-Induced Strained-Si
Carrier Lifetime
Mobility: Thickness Dependence
Mobility: Temperature Dependence
Diffusion in Strained-Si
Process-Induced Strained-Si
Uniaxial vs. Biaxial Strain Engineering
GATE DIELECTRICS ON ENGINEERED SUBSTRATES
Strained-Si MOSFET Structures
Thermal Oxidation of Strained-Si
Rapid Thermal Oxidation
Plasma Nitridation of Strained-Si
Effect of Surface Roughness
Effect of Strained-Si Layer Thickness
High-k Gate Dielectrics on Strained-Si
Gate Dielectrics on Ge
HETEROSTRUCTURE SiGe/SiGeC MOSFETS
SiGe/SiGeC:Material Parameters
SiGe Hetero-FETs: Structures and Operation
SiGe p-MOSFETs on SOI
SiGeC Hetero-FETs
SiGe-Based HEMTs
Design Issues
STRAINED-Si HETEROSTRUCTURE MOSFETS
Operating Principle
Uniaxial Stress: Process Flow
Strained-Si MOSFETs with SiC-Stressor
Biaxial Strain: Process Flow
Scaling of Strained-Si MOSFETs
Strained-Si MOSFETs: Reliability
Industry Example: TSMC
Industry Example: AMD
MODELING AND SIMULATION OF HETERO-FETS
Simulation of Hetero-FETs
Modeling of Strained-SiMaterial Parameters
Simulation of Strained-Si n-MOSFETs
Characterization of Strained-Si Hetero-FETs
TCAD: Strain-Engineered Hetero-FETs
SPICE Parameter Extraction
Performance Assessment
Summaries and References appear in each chapter.
Biography
C.K Maiti, S Chattopadhyay, L.K Bera
