1st Edition

Sub-Micron Semiconductor Devices Design and Applications

Edited By Ashish Raman, Deep Shekhar, Naveen Kumar Copyright 2022
    410 Pages 227 B/W Illustrations
    by CRC Press

    This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.

    The book:

      • Covers novel semiconductor devices with submicron dimensions
      • Discusses comprehensive device optimization techniques
      • Examines conceptualization and modeling of semiconductor devices
      • Covers circuit and sensor-based application of the novel devices
      • Discusses novel materials for next-generation devices

    This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

    Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor Devices

    Zeinab Ramezani and Arash Ahmadivand

    Chapter 2 Recent Advancements in Growth and Stability of Phosphorene:

    Prospects for High-Performance Devices

    Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, and Amitesh Kumar

    Chapter 3 Study of Transition Metal Dichalcogenides in Junctionless

    Transistors and Effect of Variation in Dielectric Oxide

    Prateek Kumar, Maneesha Gupta, Kunwar Singh, and Ashok Kumar Gupta

    Chapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects

    Afreen Khursheed and Kavita Khare

    Chapter 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter

    Katyayani Bhardwaj, Aryan, and R.K. Yadav

    Chapter 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water

    Avik Sett, Monojit Mondal, Santanab Majumder, and Tarun Kanti Bhattacharyya

    Chapter 7 Vertical Tunnel FET Having Dual MOSCAP Geometry

    Vandana Devi Wangkheirakpam, Brinda Bhowmick, and Puspa Devi Pukhrambam

    Chapter 8 Leakage Current and Capacitance Reduction in CMOS Technology

    Ajay Somkuwar and Laxmi Singh

    Chapter 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance

    Navaneet Kumar Singh, Rajib Kar, and Durbadal Mandal

    Chapter 10 Solving Schrodinger’s Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement Effects

    Amit Kumar

    Chapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool

    Remya Jayachandran, Rama S. Komaragiri, and K. J. Dhanaraj

    Chapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices

    Chhaya Verma and Jeetendra Singh

    Chapter 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications

    Suruchi Sharma, Rikmantra Basu, and Baljit Kaur

    Chapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors

    Monojit Mondal, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti Bhattacharyya

    Chapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power Application

    Ashok Kumar Gupta, Ashish Raman, Naveen Kumar, Deep Shekhar, and Prateek Kumar

    Chapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFET

    Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, and Koushik Guha

    Chapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and Applications

    Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, and Andres Jaramillo-Botero

    Chapter 18 Design and Analysis of Various Neural Preamplifier Circuits

    Swagata Devi, Koushik Guha, and Krishna Lal Baishnab

    Chapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor

    Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, and Naveen Kumar

    Chapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing Applications

    Aman Mahajan and Manreet Kaur Sohal

    Chapter 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications

    Ramesh Rathinam, Adhithan Pon, and Arkaprava Bhattacharyya

    Chapter 22 Analytical Modeling of Reconfigurable TransistorsRanjith Rajan, Suja Krishnan Jagada, and Rama S. Komaragiri

    Chapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource Utilization

    Divya Sharma, Shivam Singh, Anurag Upadhyay, and Sofyan A. Taya


    Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST,  ISRO and many more projects.

    Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog  CMOS integrated Circuits, Nano scale Device design and simulation etc.

    Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.