Sub-Micron Semiconductor Devices : Design and Applications book cover
1st Edition

Sub-Micron Semiconductor Devices
Design and Applications

ISBN 9780367648091
Published May 11, 2022 by CRC Press
410 Pages 227 B/W Illustrations

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Book Description

This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.

The book:

    • Covers novel semiconductor devices with submicron dimensions
    • Discusses comprehensive device optimization techniques
    • Examines conceptualization and modeling of semiconductor devices
    • Covers circuit and sensor-based application of the novel devices
    • Discusses novel materials for next-generation devices

This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

Table of Contents

Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor Devices

Zeinab Ramezani and Arash Ahmadivand

Chapter 2 Recent Advancements in Growth and Stability of Phosphorene:

Prospects for High-Performance Devices

Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, and Amitesh Kumar

Chapter 3 Study of Transition Metal Dichalcogenides in Junctionless

Transistors and Effect of Variation in Dielectric Oxide

Prateek Kumar, Maneesha Gupta, Kunwar Singh, and Ashok Kumar Gupta

Chapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects

Afreen Khursheed and Kavita Khare

Chapter 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter

Katyayani Bhardwaj, Aryan, and R.K. Yadav

Chapter 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water

Avik Sett, Monojit Mondal, Santanab Majumder, and Tarun Kanti Bhattacharyya

Chapter 7 Vertical Tunnel FET Having Dual MOSCAP Geometry

Vandana Devi Wangkheirakpam, Brinda Bhowmick, and Puspa Devi Pukhrambam

Chapter 8 Leakage Current and Capacitance Reduction in CMOS Technology

Ajay Somkuwar and Laxmi Singh

Chapter 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance

Navaneet Kumar Singh, Rajib Kar, and Durbadal Mandal

Chapter 10 Solving Schrodinger’s Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement Effects

Amit Kumar

Chapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool

Remya Jayachandran, Rama S. Komaragiri, and K. J. Dhanaraj

Chapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices

Chhaya Verma and Jeetendra Singh

Chapter 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications

Suruchi Sharma, Rikmantra Basu, and Baljit Kaur

Chapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors

Monojit Mondal, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti Bhattacharyya

Chapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power Application

Ashok Kumar Gupta, Ashish Raman, Naveen Kumar, Deep Shekhar, and Prateek Kumar

Chapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFET

Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, and Koushik Guha

Chapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and Applications

Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, and Andres Jaramillo-Botero

Chapter 18 Design and Analysis of Various Neural Preamplifier Circuits

Swagata Devi, Koushik Guha, and Krishna Lal Baishnab

Chapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor

Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, and Naveen Kumar

Chapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing Applications

Aman Mahajan and Manreet Kaur Sohal

Chapter 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications

Ramesh Rathinam, Adhithan Pon, and Arkaprava Bhattacharyya

Chapter 22 Analytical Modeling of Reconfigurable TransistorsRanjith Rajan, Suja Krishnan Jagada, and Rama S. Komaragiri

Chapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource Utilization

Divya Sharma, Shivam Singh, Anurag Upadhyay, and Sofyan A. Taya

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Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST,  ISRO and many more projects.

Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog  CMOS integrated Circuits, Nano scale Device design and simulation etc.

Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.