Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2  book cover
1st Edition

Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

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ISBN 9780972842280
Published June 11, 2007 by CRC Press
519 Pages

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Table of Contents

Chapter 1:
Advanced Semiconductors
An Electrothermal Solution of the Heat Equation for MMICs Based on the 2D Fourier Series
A. Giorgio and A.G. Perri
Politecnico di Bari, IT

Spectral Analysis of Channel Noise in Nanoscale MOSFETS
G. Casinovi
Georgia Institute of Technology, US

Gate Length Scaling Effects in ESD Protection Ultrathin Body SOI Devices
JW Lee, Y. Li and S.M. Sze
Natl Nano Device Labs & Natl Chiao Tung Univ, TW

A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation
HY Lin, Y. Li, JW Lee, CM Chiu and S.M. Sze
Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Chapter 2:
Nano Scale Device Modeling
Impact of Quantum Mechanical Tunnelling on Offleakage Current in Doublegate MOSFET using a Quantum Driftdiffusion Model
MA Jaud, S. Barraud and G. Le Carval

Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization
C. Renard, P. Scheiblin, F. de Crécy, A. Ferron, E. Guichard, P. Holliger and C. Laviron

Fullband Particlebased Simulation of GermaniumOnInsulator FETs
S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti
Illinois Institute of Technology, US

A TechnologyIndependent Model for Nanoscale Logic Devices
M.P. Frank
University of Florida, US

Hierarchical Simulation Approaches for the Design of UltraFast Amplifier Circuits
J. Desai, S. Aboud, P. Chiney, P. Osuch, J. Branlard, S. Goodnick and M. Saraniti
IIT/Rush University, US

Principles of Metallic Field Effect Transistor (METFET)
S.V. Rotkin and K. Hess
University of Illinois at UrbanaChampaign, Beckman Institute for Advanced Science and Technology, US

Ab Initio Simulation on Mechanical and Electronic Properties of Nanostructures under Deformation
Y. Umeno and T. Kitamura
Kyoto University, JP

Atomistic Process and Simulation in the Regime of sub50nm Gate Length
O. Kwon, K. Kim, J. Seo and T. Won
Inha University, KR

SubThreshold Electron Mobility in SOIMESFETs
T. Khan, D. Vasileska and T.J. Thornton
Arizona State University, US

Chapter 3:
Compact Modeling
Technology Limits and Compact Model for SiGe Scaled FETs
R.W. Dutton and CH Choi
Stanford, US

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects
Z. Yu, D. Zhang and L. Tian
Tsinghua University, CN

Recent Enhancements of MOS Model 11
R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
Philips Research Laboratories, NL

Noise Modeling with HiSIM Based on SelfConsistent SurfacePotential Description
M. MiuraMattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
Hiroshima University, JP

The Development of Next Generation BSIM for Sub100nm MixedSignal Circuit Simulation
X. Xi, J. He, M. Dunga, CH Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
University of California at Berkeley, US

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of DeepSubmicron MOSFETs
X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
Nanyang Technological University, SG

Modeling and Characterization of Wire Inductance for High Speed VLSI Design
N.D. Arora and L. Song
Cadence Design Systems, US

R3, an Accurate JFET and 3Terminal Diffused Resistor Model
C. McAndrew
Motorola, US

Advanced MOSFET Modeling for RF IC Design
Y. Cheng
Skyworks Solutions, US

RF Noise Models of MOSFETs A Review
S. Asgaran and M. Jamal Deen
McMaster University, CA

Bias Dependent Modeling of CollectorBase Junction Effects in Bipolar Transistors
H. Tran and M. Schroter
University of Technology Dresden, DE

Quasi2D Compact Modeling for DoubleGate MOSFET
M. Chan, T.Y. Man, J. He, X. Xi, CH Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
Hong Kong University of Science and Technology, HK

Compact, PhysicsBased Modeling of Nanoscale Limits of DoubleGate MOSFETs
Q. Chen, L. Wang, R. Murali and J.D. Meindl
Georgia Institute of Technology, US

Floating Gate Devices: Operation and Compact Modeling
P. Pavan, L. Larcher and A. Marmiroli
Università di Modena e Reggio Emilia, IT

A NonChargeSheet Analytic Theory for Undoped Symmetric DoubleGate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach
J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu
University of California, Berkeley, US

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach
J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
University of California, Berkeley, US

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction
J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
University of California, Berkeley, US

Extraction of Extrinsic Series Resistance in RF CMOS
M.S. Alam and G.A. Armstrong
The Queen's University of Belfast, UK

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of UltraShort Semiconductor Devices
H.C. Morris, M.M. DePass and H. Abebe
San Jose State University, US

On the Correlations Between Model Process Parameters in Statistical Modeling
J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar
ON Semiconductor, CZ

A Trial Report: HiSIM1.2 Parameter Extraction for 90 nm Technology
Y. Iino
Silvaco Japan, JP

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET SmallSignal Model
S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
National Nano Device Laboratories, TW

Characterization and Modeling of Silicon Tapered Inductors
A.S. Peng, K.M. Chen, G.W. Huang, S.C. Wang, H.Y. Chen and C.Y. Chang
National Nano Device Laboratories, TW

Improved Compact Model for FourTerminal DG MOSFETs
T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki and H. Koike
National Institute of Advanced Industrial Science and Technology, JP

QuantumMechanical Analytical Modeling of Threshold Voltage in LongChannel DoubleGate MOSFET with Symmetric and Asymmetric Gates
J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki

Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions
Y. Mahotin and E. Lyumkis
Integrated Systems Engineering, Inc., US

An Analytical Subthreshold Current Model for Ballistic DoubleGate MOSFETs
J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre

ThresholdVoltageBased Regional Modeling of MOSFETs with Symmetry and Continuity
S.B. Chiah, X. Zhou, K. Chandrasekaran, KY Lim, L. Chan and S. Chu
Nanyang Technology University, SG

PhysicsBased Scalable ThresholdVoltage Model for StrainedSilicon MOSFETs
K. Chandrasekaran, X. Zhou and S.B. Chiah
Nanyang Technology University, SG

Predicting the SOI History Effect Using Compact Models
M.H. Na, J.S. Watts, E.J. Nowak, R.Q. Williams and W.F. Clark
IBM Corporation, US

New Capabilities for VerilogA Implementations of Compact Device Models
M. Mierzwinski, P. OHalloran, B. Troyanovsky, K. Mayaram and R.W. Dutton
Tiburon Design Automation, US

SelfConsistent Models of DC, AC, Noise and Mismatch for the MOSFET
C. GalupMontoro, M.C. Schneider, A. Arnaud and H. Klimach
Universidade Federal de Santa Catarina, BR

Chapter 4:
Simplified HalfFlash CMOS AnalogtoDigital Conveter
P.B.Y. Tan, A.V. Kordesch and O. Sidek
Silterra Malaysia, MY

ParetoOptimal Modeling for Efficient PLL Optimization
S.K. Tiwary, S. Velu, R.A. Rutenbar, T. Mukherjee
Carnegie Mellon University, US

Scalability and High Frequency Extensions of the Vector Potential Equivalent Circuit (VPEC)
B. Mukherjee, P. Wang, L. Wang and A. Pacelli
Stony Brook University, US

Chapter 5:
System Level Modeling
A FullSystem Dynamic Model for Complex MEMS Structures
L.A. Rocha, E. Cretu and R.F. Wollfenbuttel
Delft University of Technology, NL

MixedDomain Simulation of StepFunctional Voltammetry with an Insoluble Species for Optimization of Chemical Microsystems
S.M. Martin, T.D. Strong, F.H. Gebara and R.B. Brown
University of Michigan, US

SystemLevel Optical Interface Modeling for Microsystems
T.P. Kurzweg, A.S Sharma, S.K. Bhat, S.P. Levitan, D.M. Chiarulli
Drexel University, US

Chapter 6:
MEMS Modeling
Free Surface Flow and AcoustoElastic Interaction in Piezo Inkjet
H. Wijshoff
Océ Technologies B.V., NL

Contact Force Models, including Electric Contact Deformation, for Electrostatically Actuated, CantileverStyle, RF MEMS Switches
R.A. Coutu_Jr. and P.E. Kladitis
Air Force Institute of Technology, US

Electromechanical Buckling of a PreStressed Layer Bonded to an Elastic Foundation
S. AbuSalih and D. Elata
Technion Israel Institute of Technology, IL

ThreeDimensional CFDSimulation of a Thermal Bubble Jet Printhead
T. Lindemann, D. Sassano, A. Bellone, R. Zengerle and P. Koltay
University of Freiburg, DE

Circuit Modeling and Simulation of Integrated Microfluidic Systems
A.N. Chatterjee and N.R. Aluru
Beckman Institute, US

Extending the Validity of Existing SqueezedFilm Damper Models with Elongations of Surface Dimensions
T. Veijola, A. Pursula and P. Raback
Helsinki University of Technology, FI

Feature LengthScale Modeling of LPCVD and PECVD MEMS Fabrication Processes
L.C. Musson, P. Ho, S.J. Plimpton and R.C. Schmidt
Sandia National Laboratories, US

Compact Models for SqueezeFilm Damping in the Slip Flow Regime
R. Sattler and G. Wachutka
Technical Univeristy of Münich, DE

Dynamic Simulation of an Electrostatically Actuated Impact Microactuator
X. Zhao, H. Dankowicz, C.K. Reddy and A.H. Nayfeh
Virginia Tech, US

Microplate Modeling under Coupled StructuralFluidicElectrostatic Forces
M.I. Younis and A.H. Nayfeh
Virginia Tech, US

A Model for Thermoelastic Damping in Microplates
A.H. Nayfeh and M.I. Younis
Virginia Tech, US

Design and Modeling of a 3D Micromachined Accelerometer
S.H. Ghafari, M.F. Golnaraghi and R. Mansour
University of Waterloo, CA

Effect of Thermophysical Property Variations on Surface Micromachined Polysilicon Beam Flexure Actuators
A. Atre and S. Boedo
Rochester Institute of Technology, US

A New 3D Model of The ElectroMechanical Response of Piezoelectric Structures
D. Elata, E. Elka and H. Abramovich
Technion Israel Institute of Technology, IL

Analytical Model for the Pullin Time of LowQ MEMS Devices
L.A. Rocha, E. Cretu and R.F. Wollfenbuttel
Delft University of Technology, NL

Finite Element Validation of an Inverse Approach to the Design of an Electrostatic Actuator
J. Juillard, M. Cristescu and S. Guessab
SUPELEC, Department of Measurement, FR

mor4ansys: Generating Compact Models Directly From ANSYS Models
E.B. Rudnyi, J. Lienemann, A. Greiner and J.G. Korvink
IMTEK, Albert Ludwig University, DE

Piecewise Perturbation Method (PPM) Simulation of Electrostatically Actuated Beam with Uncertain Stiffness
J. Juillard, H. Baili and E. Colinet
SUPELEC, Department of Measurement, FR

Dynamic Simulations of a Novel RF MEMS Switch
M.I. Younis, E.M. AbdelRahman and A.H. Nayfeh
Virginia Tech, US

Using Topology Derived Masks to Facilitate 3D Design
R. Schiek and R. Schmidt
Sandia National Laboratories, US

Modeling, Fabrication and Experiment of a Novel Lateral MEMS IF/RF Filter
M. Motiee, A. Khajepour and R.R. Mansour
University of Waterloo, CA

Characterization of an Electrothermal Microactuator with Multilateral Motion in Plane
C.H. Pan, Y.K. Chen and C.L. Chang
National ChinYi Institute of Technology, TW

MEMS Compact Modeling Meets Model Order Reduction: Examples of the Application of Arnoldi Methods to Microsystem Devices
J. Lienemann, D. Billger, E.B. Rudnyi, A. Greiner and J.G. Korvink
IMTEK, Albert Ludwig University, DE

Guidelines of Creating Krylovsubspace Macromodels for Lateral Viscous Damping Effects
PC Yen and YJ Yang
National Taiwan University, TW

Computationally Efficient Dynamic Modeling of MEMS
D.O. Popa, J. Critchley, M. Sadowski, K.S. Anderson and G. Skidmore
Rensselaer Polytechnic Institute, US

Dynamic Modeling and Input Shaping for MEMS
D.O. Popa, J.T. Wen, H.E. Stephanou, G. Skidmore and M. Ellis
Rensselaer Polytechnic Institute, US

FunctionOriented Geometric Design Approach To Surface Micromachined MEMS
F. Gao and Y.S. Hong
University of Toledo, US

New Accurate 3D Finite Element Technology for Solving Geometrically Complex CoupledField Problems
I. Avdeev, M. Gyimesi, M. Lovell and D. Ostergaard
University of Pittsburgh, US

Interdigitated LowLoss Ohmic RFMEMS Switches
R. Gaddi, M. Bellei, A. Gnudi, B. Margesin and F. Giacomozzi
ARCES University of Bologna, IT

Compliant Force Amplifier Mechanisms for Surface Micromachined Resonant Accelerometers
C.B.W. Pedersen and A.A. Seshia
University of Cambridge, UK

Coupling Of Resonant Modes In Micromechanical Vibratory Rate Gyroscopes
A.S. Phani, A.A. Seshia, M. Palaniapan, R.T. Howe and J. Yasaitis
University of Cambridge, UK

Numerical Modeling of a Piezoelectric Micropump
R. Schlipf, K. Haghighi and R. Lange
Purdue University, US

Identification of Anisoelasticity and Nonproportional Damping in MEMS Gyroscopes
A.S. Phani and A.A. Seshia
University of Cambridge, UK

On the Air Damping of MicroResonators in the FreeMolecular Region
S. Hutcherson and W. Ye
Georgia Institute of Technology, US

Simulation and Modeling of a Bridgetype Resonant Beam for a Coriolis True Mass Flow Sensor
S. Lee, X. Wang, W. Shin, Z. Xiao, K.K. Chin and K.R. Farmer
Microelectronics Research Center, New Jersey Institute of Technology, US

Computational Prototyping of an RF MEMS Switch using Chatoyant
M. Bails, J.A. Martinez, S.P. Levitan, I. Avdeev, M. Lovell and D.M. Chiarulli
University of Pittsburgh, US

Effective Modelling and Simulation of OverHeated Actuators
M. Zubert, M. Napieralska, A. Napieralski and J.L. Noullet
Technical University of Lodz, PL

Static and Dynamic Optical Metrology of MicroMirror Thermal Deformation
C.R. Forest, P. ReynoldsBrown, O. Blum Spahn, J. Harris, E. Novak, C.C. Wong, S. Mani, F. Peter and D. Adams
Sandia National Laboratories, US

Chapter 7:
Modeling Fundamental Phenomena in MEMS

Field induced Dielectrophoresis and Phase Separation for Manipulating Particles in Microfluidics
D.J. Bennett, B. Khusid, C.D. James, P.C. Galambos, M. Okandan, D. Jacqmin, A. Kumar, Z. Qiu and A. Acrivos
New Jersey Institute of Technology, US

Optimal Design of an Electrostatic Zipper Actuator
M.P. Brenner, J.H. Lang, J. Li and A.H. Slocum
Harvard University, US

Taylor Dispersion in Electroosmotic Flows with Random Zeta Potentials
J.P. Gleeson and H.A. Stone
University College Cork, IE

An Integrated Transport Model for Tracking of Individual Exocytotic Events Using a Microelectrode
TH Fan and A.G. Fedorov
Georgia Institute of Technology, US

The Model of Porous Media Complete Description for Aggregation of BeadMonolayers in Flat Microfluidic Chambers
M. Grumann, M. Dobmeier, P. Schippers, T. Brenner, R. Zengerle and J. Ducrée
IMTEK University of Freiburg, DE

Dealing with Stiffness in TimeDomain Stokes Flow Simulation
C.P. Coelho, J.K. White and L.M. Silveira

Modeling the Fluid Dynamics of ElectroWetting on Dielectric (EWOD)
S. Walker and B. Shapiro
University of Maryland, US

Chapter 8:
Computational Methods and Numerics
The TwoLayer ONIOM Technique in the Studies of Chemical Reactions on Carbon Nanotube Tips
V.A. Basiuk and E.V. Basiuk
Universidad Nacional Autonoma de Mexico, MX

Investigation of dsDNA Stretching Mesomechanics using Finite Element Method
C.A. Yuan and K.N. Chiang
National Tsing Hua University, TW

Computational Challenges in Nanoscale Device Modeling
E. Polizzi, A. Sameh and H. Sun
Purdue University, US

An Efficient MultiscaleLinking Algorithm for Particle Deposition
R.V. Magan and R. Sureshkumar
Washington University, US

Numerical Computation of Dispersion Relations for Multilayered Anisotropic Structures
N.D. Botkin, KH Hoffmann, O.A. Pykhteev and V.L. Turova
Center of Advanced European Studies and Research, DE

REMD toolkit : A Composable Software to Generate Parallelized Simulation Programs
M. Ito and U. Nagashima

Effective Elastic Moduli of Nanocomposites with Prescribed Random Orientation of Nanofibers
V.A. Buryachenko and A. Roy
University of Dayton Research Institute, US

Multiscale Simulation of FlowInduced Texture Formation in Thermotropic Liquid Crystals
D. Grecov and A.D. Rey
McGill University, CA

Fast BEM Solution for Coupled 3D Electrostatic and Linear Elastic Problems
N.D. Masters and W. Ye
Georgia Institute of Technology, US

Error Estimation for Arnoldibased Model Order REduction of MEMS
T. Bechtold, E.B. Rudnyi and J.G. Korvink
University of Freiburg, Germany, DE

Perturbation Analysis of TBR Model Reduction in Application to TrajectoryPiecewise Linear Algorithm for MEMS Structures
D. Vasilyev, M. Rewienski and J.K. White
Massachusetts Institute of Technology, US

A Novel Approach for VolumeIntegral Evaluation in the BEM
J. Ding and W. Ye
Georgia Institute of Technology, US

FullLagrangian Based Newton Scheme for Dynamic Analysis of Electrostatic MEMS
S.K. De and N.R. Aluru
Beckman Institute for Advanced Science and Technoloy, US

A pFFT Accelerated Linear Strength BEM Potential Solver
D.J. Willis, J.K. White and J. Peraire
Massachusetts Institute of Technology, US

Numerical and Analytical Studies of Electrothermally Induced Flow And Its Application For Mixing and Cleaning in Microfluidic Systems
J.J. Feng, S. Krishnamoorthy and S. Sandaram
CFD Research Corporation, US

Modelling MicroRheological Effects in Micro Injection Moulding with Dissipative Particle Dynamics
D. Kauzlaric, A. Greiner and J.G. Korvink
University of Freiburg, Germany, DE

New Computational Methods for LongRange Electromagnetic Interactions on the Nanoscale
I. Tsukerman, G. Friedman and D. Halverson
The University of Akron, US

Decay of Nanostructures
F. Hausser and A. Voigt
Research Center Caesar, DE

Simulation of Carbonaceous Mesophases MicroTextures
L.R.P. de Andrade Lima and A.D. Rey
McGill University, CA

A Numerical Algorithm for Complex Biological Flow in Irregular Microdevice Geometries
D. Trebotich, P. Colella, G.H. Miller, A. Nonaka, T. Marshall, S. Gulati and D. Liepmann
Lawrence Livermore National Laboratory, US

InAs/GaAs Quantum Ring in Energy Dependent Quasi Particle Effective Mass Approximation
I. Filikhin , V.M. Suslov, E. Deyneka and B. Vlahovic
North Carolina Central University, US

Corner Charge Singularity of Conductors
CO Hwang and J.A. Given
Inha University, KR

Parallelization of BEM Electrostatic Solver Using a PC Cluster
HK Tang and YJ Yang
National Taiwan University, TW

Improved O(N) Neighbor List Method Using Domain Decomposition and Data Sorting
ZH Yao, JS Wang and M. Cheng
National University of Singapore, SG

Design and Verification of an Electrostatic MEMS Simulator
V. Szekely, G. Bognar, M. Rencz, F. Ciontu, B. Charlot and B. Courtois
Micred, HU

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