3D Integration of Resistive Switching Memory
- Available for pre-order on March 10, 2023. Item will ship after March 31, 2023
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Book Description
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.
Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:
1: Associative Problems in Crossbar array and 3D architectures;
2: Selector Devices and Self-selective cells;
3: Integration of 3D RRAM;
4: Reliability Issues in 3D RRAM;
5: Applications of 3D RRAM Beyond Storage.
The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Table of Contents
1. Introduction
Qing Luo
2.Associative Problems in Crossbar array and 3D architectures
Qing Luo
3. Selector Devices and Self-selective cells
Yaxin Ding, Qing Luo
4. Integration of 3D RRAM
Qing Luo
5. Reliability issues of the 3D Vertical RRAM
Tiancheng Gong, Dengyun Lei
6. Applications of 3D RRAM Beyond Storage
Xumeng Zhang, Xiaoxin Xu, Jianguo Yang
7. Conclusion
Qing Luo
Author(s)
Biography
Qing Luo received his Ph.D. degree in Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.