Free standard shipping on all orders
  • Visa
  • Master Card
  • American Express
  • Apple Pay
  • Google Pay
  • JCB

3D Integration of Resistive Switching Memory book cover

1st Edition

3D Integration of Resistive Switching Memory

Edited By Qing Luo Copyright 2023
106 Pages 60 B/W Illustrations
by CRC Press

106 Pages 60 B/W Illustrations
by CRC Press

106 Pages 60 B/W Illustrations
by CRC Press
Also available as eBook on:
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. 　 Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple... Read more

1. Introduction

Qing Luo

2.Associative Problems in Crossbar array and 3D architectures

Qing Luo

3. Selector Devices and Self-selective cells

Yaxin Ding, Qing Luo

4. Integration of 3D RRAM

Qing Luo

5. Reliability issues of the 3D Vertical RRAM

Tiancheng Gong, Dengyun Lei

6. Applications of 3D RRAM Beyond Storage

Xumeng Zhang, Xiaoxin Xu, Jianguo Yang

7. Conclusion

Qing Luo

Biography

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.

Add to Cart