Applications of Silicon-Germanium Heterostructure Devices: 1st Edition (Hardback) book cover

Applications of Silicon-Germanium Heterostructure Devices

1st Edition

By C.K Maiti, G.A Armstrong

CRC Press

402 pages

Purchasing Options:$ = USD
Hardback: 9780750307239
pub: 2001-07-20
$290.00
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pub: 2001-07-20
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Description

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.

Reviews

"The authors have certainly identified a gap in the literature … Overall, the book is very informative and provides a strong foundation for work in this active research area."

-K. Alan Shore, Optics and Photonics News

Table of Contents

Introduction

Film Growth and Material Parameters

Principles of SiGe-HBTs

Design of SiGe-HBTs

Simulation of SiGe-HBTs

Strained-Si Heterostructure FETs

SiGe Heterostructure Schottky Diodes

SiGe Optoelectronic Devices

RF Applications of SiGe-HBTs

About the Series

Series in Optics and Optoelectronics

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Subject Categories

BISAC Subject Codes/Headings:
SCI077000
SCIENCE / Solid State Physics
TEC021000
TECHNOLOGY & ENGINEERING / Material Science