1st Edition
Applications of Silicon-Germanium Heterostructure Devices
414 Pages
by
CRC Press
402 Pages
by
CRC Press
Also available as eBook on:
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how... Read more
Introduction
Film Growth and Material Parameters
Principles of SiGe-HBTs
Design of SiGe-HBTs
Simulation of SiGe-HBTs
Strained-Si Heterostructure FETs
SiGe Heterostructure Schottky Diodes
SiGe Optoelectronic Devices
RF Applications of SiGe-HBTs
Film Growth and Material Parameters
Principles of SiGe-HBTs
Design of SiGe-HBTs
Simulation of SiGe-HBTs
Strained-Si Heterostructure FETs
SiGe Heterostructure Schottky Diodes
SiGe Optoelectronic Devices
RF Applications of SiGe-HBTs
Biography
C.K Maiti, G.A Armstrong
"The authors have certainly identified a gap in the literature … Overall, the book is very informative and provides a strong foundation for work in this active research area."
-K. Alan Shore, Optics and Photonics News
