Disordered Semiconductors: Physics and Applications, 1st Edition (Hardback) book cover

Disordered Semiconductors

Physics and Applications, 1st Edition

Edited by Anatoly Popov

Jenny Stanford Publishing

201 pages | 8 Color Illus. | 132 B/W Illus.

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Hardback: 9789814241762
pub: 2010-11-30
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This textbook links characteristic features of atomic and electronic structures of disordered semiconductors to the device design process. It begins with a description of general concepts of disordered semiconductors, their atomic structures, the structure of energy bands, and their defects, as well as their electrical, optical, and photovoltaic properties. Since weak sensitivity to impurities is a distinguishing feature of disordered semiconductors, methods of property control and thin-film preparation methods are the areas of focus. Finally, applications of disordered semiconductors in various devices are considered.


"Readers of this book are taken on a logical journey beginning with three comprehensive chapters on the fundamental properties of disordered semiconductors, followed by two outlining the methods used to control the properties and fabricate thin films of these materials, and concluding with two chapters describing the current status of their applications. Students and scientists entering or working in the field will find it an exceedingly valuable and useful text."

—Prof. E. A. Davis, University of Cambridge, UK

"This book provides under a single cover and from a single perspective a description of physics and applications of disordered semiconductors. With complex issues explained using a simple language this book will be very valuable source of information for graduate and postgraduate students in the field of semiconductor physics and devices."

—Dr Alex Kolobov, Advanced Industrial Science and Technology, Japan

"This book comprehends a wide group of questions: atomic and electron structure, electrical, optical, photoelectric properties and application of disordered semiconductors, first of all the hydrogenated amorphous silicon, its alloys and chalcogenide glassy semiconductors. Important peculiarity of the book is the consideration of the main technologies of both thin films and devices fabrication. The book is interesting to all workers in the field."

—Prof. Victor Lyubin, Ben-Gurion University, Israel

Table of Contents




Definition of Disordered State

Classification of Non-crystalline Systems

Qualitative and Quantitative Characteristics of Glass-Formation

Atomic Structure of Disordered Semiconductors

Structural Characteristics of Solids

Short Range and Medium Range Order

Methods of Investigation of Disordered System Structure

Simulation of Disordered Material Structure

Results of Structural Research of Disordered Semiconductors

Electronic Structure and Properties of Disordered Semiconductors

Electronic Structure

Electrical Properties of Disordered Semiconductors

Optical Properties of Disordered Semiconductors

Photoelectrical Properties of Disordered Semiconductors

Methods for Controlling Properties of Disordered Semiconductors

Doping of Hydrogenated Amorphous Silicon

Chemical Modification of Chalcogenide Glassy Semiconductor Films

Conductivity Type Inversion in Bulk Glassy Chalcogenide

Structural Modification of Disordered Semiconductors Properties

Preparation Methods of Disordered Semiconductor Films

Technological Distinctions of Chalcogenide Glassy Film Preparation

Preparation of Hydrogenated Amorphous Silicon Films by GlowDischargeDecompositionMethod

Preparation of AIV BIV Alloys on the Base of Hydrogenated Amorphous Silicon

Preparation of Hydrogenated Amorphous Silicon Films by ChemicalVaporDeposition(CVD)Methods

Preparation of Hydrogenated Amorphous Silicon Films by Radio-frequency Sputtering Method

Optical Information Storage and Transmission Devices

Devices Based on Charge Pattern Recording

Devices based on Photo-induced Transformations in Chalcogenide Glasses

Photoelectric and Electronic Devices Based on Disordered Semiconductors

Photovoltaic Devices

Switching and Memory Devices on the Basis of Chalcogenide Alloys

Silicon Thin Film Transistors



Color Inserts


About the Editor

Anatoly Popov is professor and head of the Semiconductor Electronics Department at the Moscow Power Engineering Institute, Russia.

Subject Categories

BISAC Subject Codes/Headings:
SCIENCE / Physics
SCIENCE / Life Sciences / General
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics