Nano-scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design, 1st Edition (Hardback) book cover

Nano-scale CMOS Analog Circuits

Models and CAD Techniques for High-Level Design, 1st Edition

By Soumya Pandit, Chittaranjan Mandal, Amit Patra

CRC Press

408 pages | 179 B/W Illus.

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Description

Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database.

Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits.

The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation.

• Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method

• Provides case studies demonstrating the practical use of these two methods

• Explores circuit sizing and specification translation tasks

• Introduces the particle swarm optimization technique and provides examples of sizing analog circuits

• Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering

Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.

Reviews

"… for appropriate usage of CAD tools, deep understanding of various models and methodologies are needed for the success of today’s IC design. [this book] addresses such needs for IC design in general and analog design in particular. Thus, this is a very valuable book for students and practicing engineers involved in microelectronics."

Dr. Samar K. Saha, Adjunct Prof. Santa Clara University; VP of Publications, IEEE Electron Devices Society

Table of Contents

Introduction

Introduction

Characterization of Technology Scaling

Analog Design Challenges in Scaled CMOS Technology

Motivation for CAD Techniques

Conventional Design Techniques for Analog IC Design

Knowledge-based CAD Technique for Analog ICs

Summary and Conclusion

High-Level Modeling and Design Techniques

Introduction

High-Level Model

Behavioral Model Generation Technique

Introduction to Optimization Techniques

Some Important Optimization Algorithms

Multi-Objective Optimization Method

Pareto Optimal Front

Design Space Exploration

Computational Complexity of a CAD Algorithm

Technology aware Computer Aided IC Design Technique

Commercial Design Tools

Modeling of Scaled MOS Transistor for VLSI Circuit Simulation

Introduction

Device Modeling

Compact Models

Long-Channel MOS Transistor

Threshold Voltage Model for Long-channel Transistor with Uniform Doping

SPICE Level Drain Current Model

SPICE Level I-V Model

MOSFET Capacitances

Short-Channel MOS Transistor

Threshold Voltage for Short-Channel MOS Transistor

I-V Model for Short-Channel MOS transistor

Weak Inversion Characteristics of a Scaled MOS transistor

Hot Carrier Effect

Source-Drain Resistance Model

Compact Modeling

Salicide Technology

Physical Model for Output Resistance

Poly-silicon Gate Depletion Effect

Effective Channel Length and Width

Summary and Conclusion

Performance and Feasibility Model Generation using Learning based Approach

Introduction

Requirement of Leaning-based Approaches

Regression Problem for Performance Model Generation

Some Related Works

Preliminaries on Artificial Neural Network

Neural Network Model Development

Case Study 1: Performance Modeling of CMOS Inverter

Case Study 2: Performance Modeling of Spiral Inductor

Dynamic Adaptive Sampling

Introduction to Least Squares Support Vector Machines

Feasible Design Space and Feasibility Model

Case Study 3: Combined Feasibility and Performance Modeling of Two-Stage Operational Amplifier

Case Study 4: Architecture-Level Performance Modeling of Analog Systems

Meet-in-the-Middle Approach for Construction of Architecture-Level Feasible Design Space

Case Study 5: Construction of FeasibilityModel at Architecturelevel of an Interface Electronics for MEMS Capacitive Accelerometer System

Summary and Conclusion

Circuit Sizing and Specification Translation

Introduction

Circuit Sizing as a Design Space Exploration Problem

Particle Swarm Optimization Algorithm (PSO)

Case Study 1: Design of a Two Stage Miller OTA

Case Study 2: Synthesis of On-chip Spiral Inductors

Case Study 3: Design of a nano-scale CMOS inverter for Symmetric Switching Characteristics

The gm/ID Methodology for Low Power Design

High-Level Specification Translation

Summary and Conclusion

Advanced Effects of Scaled MOS Transistors

Introduction

Narrow Width Effect on Threshold Voltage

Channel Engineering of MOS Transistor

Gate Leakage Current

High-κ Dielectrics and Metal-Gate/High-κ CMOS Technology

Advanced Device Structures of MOS Transistors

Noise Characterization of MOS Transistors

Gate Resistance and Substrate Network Model of MOS Transistor for RF Applications

Summary and Conclusion

Process Variability and Reliability of Nano-scale CMOS Analog Circuits

Introduction

Basic Concepts on Yield and Reliability

Sources of Variations in Nanometer Scale Technology

Systematic Process Variations

Random Process Variations

Statistical Modeling

Physical Phenomena Affecting the Reliability of Scaled MOS

Transistor

Physical Model for MOSFET Degradation due to HCI

Reaction-Diffusion Model for NBTI

Reliability Simulation for Analog Circuits

Summary and Conclusion

Bibliography

About the Authors

Author

Amit Patra

Kharagpur, West Bengal, India

Learn more about Amit Patra >>

Soumya Pandit received a B.Sc degree with Physics Honors, M.Sc degree in electronic science from University of Calcutta in 1998 and 2000, and an M.Tech degree in radio physics and electronics from the same university in 2002. He obtained his PhD degree from Indian Institute of Technology, Kharagpur in information technology in the year 2009. His current research activities are on statistical CMOS analog circuit design and optimization, process-device-circuit interaction, and soft computing applications. Dr. Pandit has to his credit several international journal and conference publications. He is a member of IEEE, USA and an associate member of the Institute of Engineers (India).

Chittaranjan Mandal received his PhD from the Indian Institute of Technology, Kharagpur, India, in 1997. He is currently a professor in the Department of Computer Science and Engineering and also the School of Information Technology at IIT, Kharagpur. His research interests include high-level system design, formal modeling, and verification. He has been an Industrial Fellow of Kingston University, UK, since 2000 and was also a recipient of a Royal Society Fellowship for conducting collaborative research in the UK. He has handled sponsored projects from government agencies as well as private agencies such as Nokia, Natsem, and Intel. He also serves as a reviewer for several journals and conferences.

Amit Patra received B.Tech., M.Tech., and Ph.D. degrees from the Indian Institute of Technology, Kharagpur in 1984, 1986, and 1990 respectively. He is currently a professor of electrical engineering at IIT Kharagpur where he served as the Dean (Alumni Affairs and International Relations) between 2007 and 2013. His current research interests include power management circuits, mixed-signal SoC design and embedded control systems. He has published more than 200 research papers and designed about 12 integrated circuits. He has carried out sponsored research with multiple industries such as National Semiconductor Corporation, Freescale Semiconductor, Infineon Technologies and Maxim Integrated Circuits.

Subject Categories

BISAC Subject Codes/Headings:
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General
TEC027000
TECHNOLOGY & ENGINEERING / Nanotechnology & MEMS
TEC064000
TECHNOLOGY & ENGINEERING / Sensors