196 pages | 20 Color Illus. | 52 B/W Illus.
This book is focused on the spintronic properties of III–V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. The book covers generic topics in spintronics without entering into device specifics, since the overall goal of the enterprise is to provide theoretical background for most common concepts of spin-electron physics and give instructions to be used in solving problems of a general and specific nature. The book is intended for graduate students and may serve as an introductory course in this specific field of solid-state theory and applications.
"This book serves as a useful reference on the electronic structure and spontaneous and piezoelectric polarization of wurtzite-structure nitride semiconductors. Various chapters explain in detail how polarization fields and the Rashba effect combine to turn these materials into promising materials for spintronics as well as topological insulators. The concepts are illustrated with many applications. Overall, this work will serve as a valuable resource for students and practitioners alike."
—Prof. Chris G. Van de Walle,University of California, USA
"This book comes at a very good time, just as the scientific community is ready to explore new materials in search of room-temperature ferromagnetism in semiconductors. In his excellent book, Vladimir Litvinov provides a comprehensive arsenal of theoretical tools needed for tackling this challenge. His treatment of various exchange interactions and spin-orbit effects in semiconductors is handled masterfully, laying the ground for the exploration of spintronic effects in materials of current interest, which range from wide-gap semiconductors to topological insulators. An excellent reference for students and scientists working in this area."
—Prof. Jacek K. Furdyna,University of Notre Dame, USA
GaN Band Structure. Rashba Hamiltonian. Rashba Spin Splitting in III–Nitride Heterostructures and Quantum Wells. Tunnel Spin Filter in Rashba Quantum Structures. Exchange Interaction in Semiconductors and Metals. Ferromagnetism in III–V Semiconductors. Topological Insulators. Magnetic Exchange Interaction in Topological Insulators.