1st Edition

Intelligent Integrated Systems
Devices, Technologies, and Architectures

Edited By

Simon Deleonibus




ISBN 9789814411424
Published April 9, 2014 by Jenny Stanford Publishing
516 Pages 23 Color & 233 B/W Illustrations

USD $160.00

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Book Description

A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

Table of Contents

Introduction
Intelligent Integrated Systems Forward to Zero Variability and Zero Power! S. Deleonibus

Advanced Silicon-Based CMOS Technologies
From Planar to Trigate and Nanowires Fully Depleted Transistors, Francois Andrieu, Olivier Weber, Marie-Anne Jaud, Thomas Ernst, and Olivier Faynot
Schottky Source/Drain MOSFETs, Emmanuel Dubois, Guilhem Larrieu, Nicolas Reckinger, Xiaohui Tang, Jean-Pierre Raskin, Maud Vinet, and Louis Hutin
Advances in Silicon-On-Diamond Technology, Jean-Paul Mazellier, Julie Widiez, Marc Rabarot, François Andrieu, Samuel Saada, Mathieu Lions, Philippe Bergonzo, and Simon Deleonibus
GeOI, SiGeOI and New Devices Architectures, Cyrille Le Royer, Emmanuel Augendre, Louis Hutin, Frédéric Mayer, William Van den Daele
3D Monolithic Integration, Maud Vinet, Perrine Batude, Shashikanth Bobba
III-V Quantum-Well FETs, Suman Datta
Carbon Integrated Electronics, Hong Li, Yasin Khatami, Deblina Sarkar, Jiahao Kang, Chuan Xu, Wei Liu, and Kaustav Banerjee

New Paths to Augmented Silicon CMOS Technologies
Tunneling Field-Effect Transistors – Challenges and Perspectives, Joachim Knoch
Molecular Memories, Julien Buckley, Tiziana Pro, Venera Aiello, Micaël Charbonneau, and Barbara De Salvo
Resistive Memories, Blanka Magyari-Köpe and Yoshio Nishi
High frequency vibrating nanowire, Laurent Duraffourg and Thomas Ernst
Spintronics, Guillaume Prenat, Ursula Ebels, Gregory Di Pendina, Ricardo Sousa, and Bernard Dieny
Smart Multiphysics Sensors, Masayoshi Esashi
3D Integration and Wafer Level Packaging, Gilles Poupon

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Editor(s)

Biography

Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981–1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and Chinese Academy of Science (Beijing, PRC) since 2016. A recipient of several awards and honors, and erstwhile associate editor of the IEEE Transactions on Electron Devices (2008-2014), Prof. Deleonibus is research director of the CEA since 2002, a distinguished lecturer at IEEE since 2004, and a fellow of the IEEE since 2006 and of the Electrochemical Society since 2015.

Reviews

"This book gives an outstanding summary of the current state of the art for the ultimate integrated nanoelectronic device technology. Simon has pulled together a great team of leading researchers who not only describe the present but are also looking ahead on possible and probable future technology directions. The reader can enjoy an up-to-date reference list on current research in the respective fields, including new device architectures and new multifunctional solutions. Definitely on the reading recommendations for my PhD students!"

—Prof. Mikael Östling, KTH Royal Institute of Technology, Sweden

"The appearance of this book is very timely, given its comprehensive coverage of major topics in advanced CMOS technologies, as well as futuristic ‘beyond Si’ technologies. The editor is a well-recognized world leader in the field, and the authors are first-class experts who are well qualified to write their respective chapters. This book will benefit numerous students/engineers/researchers, and I plan to use it as a textbook in my advanced graduate-level class on ‘Advanced CMOS Technologies.’"

—Prof. T. P. Ma, Yale University, USA

"Nowadays, there is such a diversity in the new device technologies that even professional researchers have difficulty to catch up on them all. The publication of the book Intelligent Integrated Systems: Devices, Technologies, and Architectures is very timely, because it gives state-of-the-art information about semiconductors to engineers and students."

—Prof. Hiroshi Iwai, Tokyo Institute of Technology, Japan