Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, 1st Edition (Hardback) book cover

Silicon Heterostructure Handbook

Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, 1st Edition

Edited by John D. Cressler

CRC Press

1,248 pages | 871 B/W Illus.

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Hardback: 9780849335594
pub: 2005-11-01
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An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.

Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.

Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.


"…a collection of 28 high-quality reviews rich in references, is a great success. The impact could go even further. I was very impressed on first reading, I was also very surprised by the contributors, since they are mostly eminent and very active in the field, though relatively young and representative of future trends. I was also excited by the up-to-date research content. Finally, this book will undoubtedly be an essential reference for researchers and an introduction for students just starting in the field."

-Bao-Lian Su, Materials Today, Vol. 9, No. 1-2, Jan-Feb. 2006

Table of Contents

Foreword; B.S. Meyerson


The Big Picture; J.D. Cressler

A Brief History of the Field; J.D. Cressler


Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler

Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil

Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot

MBE Growth Techniques; M. Oehme and E. Kasper

UHV/CVD Growth Techniques; T.N. Adam

Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich

Stability Constraints in SiGe Epitaxy; A. Fischer

Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J.L. Hoyt

Carbon Doping of SiGe; H.J. Osten

Contact Metallization on Silicon-Germanium; C.K. Maiti

Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki


Overview: Fabrication of SiGe HBT BiCMOS Technology; J.D. Cressler

Device Structures and BiCMOS Integration; D.L. Harame

SiGe HBTs on CMOS-Compatible SOI; J. Cai and T.H. Ning

Passive Components; J.N. Burghartz

Industry Examples at State-of-the-Art: IBM; A.J. Joseph and J.S. Dunn

Industry Examples at State-of-the-Art: Jazz; P.H.G. Kempf

Industry Examples at State-of-the-Art: Hitachi; K. Washio

Industry Examples at State-of-the-Art: Infineon; T.F. Meister, H. Schäfer, W. Perndl, and J. Böck

Industry Examples at State-of-the-Art: IHP; D. Knoll

Industry Examples at State-of-the-Art: ST; A. Chantre, M. Laurens, B. Szelag, H. Baudry, P. Chevalier, J. Mourier, G. Troillard, B. Martinet, M. Marty, and A. Monroy

Industry Examples at State-of-the-Art: Texas Instruments; B. El-Kareh, S. Balster, P. Steinmann, and H. Yasuda

Industry Examples at State-of-the-Art: Philips; R. Colclaser and P. Deixler


Overview: SiGe HBTs; J.D. Cressler

Device Physics; J.D. Cressler

Second-Order Effects; J.D. Cressler

Low-Frequency Noise; G. Niu

Broadband Noise; D.R. Greenberg

Microscopic Noise Simulation; G. Niu

Linearity; G. Niu

pnp SiGe HBTs; J.D. Cressler

Temperature Effects; J.D. Cressler

Radiation Effects; J.D. Cressler

Reliability Issues; J.D. Cressler

Self-Heating and Thermal Effects; J-S. Rieh

Device-Level Simulation; G. Niu

SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg


Overview: Heterostructure FETs; J.D. Cressler

Biaxial Strained Si CMOS; K. Rim

Uniaxial Stressed Si MOSFET; S.E. Thompson

SiGe-Channel HFETs; S. Banerjee

Industry Examples at State-of-the-Art: Intel's 90 nm Logic Technologies; S.E. Thompson


Overview: Other Heterostructure Devices; J.D. Cressler

Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser

IMPATT Diodes; E. Kasper and M. Oehme

Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald

Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R. Hull


Overview: Optoelectronic Components; J.D. Cressler

Si-SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim

Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto

Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving

Si-SiGe Quantum Cascade Emitters; D.J. Paul


Overview: Measurement and Modeling; J.D. Cressler

Best-Practice AC Measurement Techniques; R.A. Groves

Industrial Application of TCAD for SiGe Development; D.C. Sheridan, J.B. Johnson, and R. Krishnasamy

Compact Modeling of SiGe HBTs: HICUM; M. Schröter

Compact Modeling of SiGe HBTs: MEXTRAM; S. Mijalkovic

CAD Tools and Design Kits; S.E. Strang

Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs; R. Singh

Transmission Lines on Si; Y.V. Tretiakov

Improved De-Embedding Techniques; Q. Liang


Overview: Circuits and Applications; J.D. Cressler

SiGe as an Enabler for Wireless Communications Systems; L.E. Larson and D.Y.C. Lie

LNA Optimization Strategies; Q. Liang

Linearization Techniques; L.C.N. de Vreede and M.P. van der Heijden

SiGe MMICs; H. Schumacher

SiGe Millimeter-Wave ICs; J-F. Luy

Wireless Building Blocks Using SiGe HBTs; J.R. Long

Direct Conversion Architectures for SiGe Radios; S. Chakraborty and J. Laskar

RF MEMS Techniques in Si/SiGe; J. Papapolymerou

Wideband Antennas on Silicon; M.M. Tentzeris and R.L. Li

Packaging Issues for SiGe Circuits; K. Lim, S. Pinel, and J. Laskar

Industry Examples at State-of-the-Art: IBM; D.J. Friedman and M. Meghelli

Industry Examples at State-of-the-Art: Hitachi; K. Washio

Industry Examples at State-of-the-Art: ST; D. Belot


Properties of Silicon and Germanium; J.D. Cressler

The Generalized Moll-Ross Relations; J.D. Cressler

Integral Charge-Control Relations; M. Schröter

Sample SiGe HBT Compact Model Parameters; R.M. Malladi


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Subject Categories

BISAC Subject Codes/Headings:
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics
TECHNOLOGY & ENGINEERING / Environmental / General